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Boutros; Karim S.
Moorpark, CA
No. of patents:

Patent Number Title Of Patent Date Issued
8124505 Two stage plasma etching method for enhancement mode GaN HFET February 28, 2012
A two stage plasma etching technique is described that allows the fabrication of an enhancement mode GaN HFET/HEMT. A gate recess area is formed in the Aluminum Gallium Nitride barrier layer of an GaN HFET/HEMT. The gate recess is formed by a two stage etching process. The first stage
7151307 Integrated semiconductor circuits on photo-active Germanium substrates December 19, 2006
A semiconductor device having at least one layer of a group III V semiconductor material epitaxially deposited on a group III V nucleation layer adjacent to a germanium substrate. By introducing electrical contacts on one or more layers of the semiconductor device, various optoelectr
6635507 Monolithic bypass-diode and solar-cell string assembly October 21, 2003
An apparatus and method are described for making a solar cell with an integrated bypass diode. The method comprises the steps of depositing a second layer having a first type of dopant on a first layer having an opposite type of dopant to the first type of dopant to form a solar cell,
6350944 Solar module array with reconfigurable tile February 26, 2002
A reconfigurable solar panel system having a plurality of solar cells arranged in a predefined pattern on a printed circuit board having a predefined pattern of interconnection paths to form at least one solar cell module. The solar panel being made of at least one solar cell module

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