| Patent Number |
Title Of Patent |
Date Issued |
| 7098393 |
Thermoelectric device with multiple, nanometer scale, elements |
August 29, 2006 |
| A thermoelectric device formed of nanowires on the nm scale. The nanowires are preferably of a size that causes quantum confinement effects within the wires. The wires are connected together into a bundle to increase the power density. |
| 6942728 |
High performance p-type thermoelectric materials and methods of preparation |
September 13, 2005 |
| The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein |
| 6563039 |
Thermoelectric unicouple used for power generation |
May 13, 2003 |
| A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also descr |
| 6458319 |
High performance P-type thermoelectric materials and methods of preparation |
October 1, 2002 |
| The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein |
| 6288321 |
Electronic device featuring thermoelectric power generation |
September 11, 2001 |
| A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high |
| 5831286 |
High mobility p-type transition metal tri-antimonide and related skutterudite compounds and allo |
November 3, 1998 |
| Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb.sub.3, P.sub.3, or As.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced |
| 5769943 |
Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques |
June 23, 1998 |
| Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor mat |
| 5747728 |
Advanced thermoelectric materials with enhanced crystal lattice structure and methods of prepara |
May 5, 1998 |
| New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The |
| 5610366 |
High performance thermoelectric materials and methods of preparation |
March 11, 1997 |
| Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor |
