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Bonnevie; Dominique
Leuville sur Orge, FR
No. of patents:

Patent Number Title Of Patent Date Issued
5486489 Method of manufacturing a semiconductor component, in particular a buried ridge laser January 23, 1996
In the method, a doped semiconductor coating is to be deposited on a disturbed surface (S) of a semiconductor base (9) doped with a dopant having the same conductivity type as the coating. According to the invention, prior to depositing a main layer (28) of the coating (10), a superd
5215939 Method of manufacturing a planar buried heterojunction laser June 1, 1993
In a method of manufacturing a planar buried heterojunction laser, after etching to delimit a laser stripe in relief on a substrate, lateral layers to surround the stripe are formed by a non-selective growth method not only at the sides of the stripe but also above it to create a parasit

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