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Inventor:
Bolandrina; Efrem
Address:
I-24020 Fiorano Al Serio (BG), IT
No. of patents:
1
Patents:




Patent Number Title Of Patent Date Issued
7554861 Memory device with a ramp-like voltage biasing structure and reduced number of reference cells June 30, 2009
A memory device is proposed. The memory device includes a plurality of memory cells, means for comparing a set of selected memory cells with at least one reference cell having a predefined threshold voltage, the means for comparing including biasing means for applying a biasing voltage


 
 
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