| Patent Number |
Title Of Patent |
Date Issued |
| 5190792 |
High-throughput, low-temperature process for depositing oxides |
March 2, 1993 |
| The present invention relates to a low-pressure chemical vapor deposition (LPCVD) process for depositing silicon dioxide. In particular, the present invention describes a process involving a pre-cleaning step in which all impurities are removed from the substrate followed by a LPCVD step |
| 5133986 |
Plasma enhanced chemical vapor processing system using hollow cathode effect |
July 28, 1992 |
| A high-efficiency, low-temperature, plasma-enhanced chemical vapor deposition (PECVD) system for growing or depositing various types of thin films on substrate surfaces, or etching such surfaces, using substrates of materials such as silicon, plastic, etc. The system uses a hollow-ca |
| 4978421 |
Monolithic silicon membrane device fabrication process |
December 18, 1990 |
| The method of fabrication of a monolithic silicon membrane structure in which the membrane and its supporting framework are constructed from a single ultra thick body of silicon. The fabrication sequence includes the steps of providing a doped membrane layer on the silicon body, forming |
| 3936322 |
Method of making a double heterojunction diode laser |
February 3, 1976 |
| A method for improving the current confinement capacity of a double heterojunction laser by using a high energy implantation of oxygen in the regions of an injection laser surrounding the active region of such laser so as to make such regions semi-insulating. |
