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Inventor: Blaske; Theodore A.
Address: Plano, TX
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 4194934 |
Method of passivating a semiconductor device utilizing dual polycrystalline layers |
March 25, 1980 |
| A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and |
| 4161744 |
Passivated semiconductor device and method of making same |
July 17, 1979 |
| A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and |
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