| Patent Number |
Title Of Patent |
Date Issued |
| 7364805 |
Crystal film, crystal substrate, and semiconductor device |
April 29, 2008 |
| A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) |
| 7250320 |
Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor lig |
July 31, 2007 |
| A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided.An n-type GaN layer is grown on a sapphire substrate, and a growth ma |
| 7227189 |
Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device |
June 5, 2007 |
| Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the |
| 7221001 |
Semiconductor light-emitting device and process for producing the same |
May 22, 2007 |
| Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of |
| 7205168 |
Semiconductor light emitting device, its manufacturing method, integrated semiconductor light em |
April 17, 2007 |
| An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C |
| 7135348 |
Semiconductor light emitting device and fabrication method thereof |
November 14, 2006 |
| A semiconductor light emitting device is fabricated by forming a mask having an opening on a substrate, forming a crystal layer having a tilt crystal plane tilted from the principal plane of the substrate by selective growth from the opening of the mask, and forming, on the crystal l |
| 7129515 |
Lighting system |
October 31, 2006 |
| Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of |
| 7129514 |
Image display unit |
October 31, 2006 |
| Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of |
| 7129107 |
Process for producing a semiconductor light-emitting device |
October 31, 2006 |
| Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of |
| 7122826 |
Image display unit |
October 17, 2006 |
| Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of |
| 7122825 |
Lighting system |
October 17, 2006 |
| Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of |
| 7122394 |
Process for producing a semiconductor light-emitting device |
October 17, 2006 |
| Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of |
| 7087932 |
Semiconductor light-emitting device and semiconductor light-emitting device |
August 8, 2006 |
| A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth |
| 7067339 |
Selective growth method, and semiconductor light emitting device and fabrication method thereof |
June 27, 2006 |
| At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporat |
| 7033436 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
April 25, 2006 |
| Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing |
| 7030421 |
Semiconductor light emitting device and fabrication method thereof |
April 18, 2006 |
| Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the |
| 7002183 |
Semiconductor light emitting device having a semiconductor layer formed by selective growth |
February 21, 2006 |
| Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the openin |
| 7002182 |
Semiconductor light emitting device integral type semiconductor light emitting unit image displa |
February 21, 2006 |
| A semiconductor light emitting device with improved luminous efficiency is provided. An underlying n-type GaN layer is grown on a sapphire substrate, and a growth mask made from SiO.sub.2 film or the like is formed on the underlying n-type GaN layer. An n-type GaN layer having a hexa |
| 6998645 |
Semiconductor light emitting device having a semiconductor layer formed by selective growth |
February 14, 2006 |
| Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the openin |
| 6969670 |
Selective growth method, and semiconductor light emitting device and fabrication method thereof |
November 29, 2005 |
| At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporat |
| 6967353 |
Semiconductor light emitting device and fabrication method thereof |
November 22, 2005 |
| A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed o |
| 6946686 |
Method of fabricating semiconductor device and semiconductor device |
September 20, 2005 |
| A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first |
| 6927164 |
Method of fabricating semiconductor device and semiconductor device |
August 9, 2005 |
| A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first |
| 6924500 |
Semiconductor light-emitting device and process for producing the same |
August 2, 2005 |
| Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of |
| 6881982 |
Semiconductor light emitting device |
April 19, 2005 |
| Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening |
| 6870190 |
Display unit and semiconductor light emitting device |
March 22, 2005 |
| A display unit and semiconductor light emitting devices are provided. The display unit includes a number of the semiconductor light emitting devices arrayed on a base body, wherein each of the semiconductor light emitting devices is formed together with dummy devices for setting an emiss |
| 6858081 |
Selective growth method, and semiconductor light emitting device and fabrication method thereof |
February 22, 2005 |
| In a selective growth method, growth interruption is performed at the time of selective growth of a crystal layer on a substrate. Even if the thickness distribution of the crystal layer becomes non-uniform at the time of growth of the crystal layer, the non-uniformity of the thickness |
| 6831300 |
Semiconductor light emitting device, manufacturing method of a semiconductor light emitting devi |
December 14, 2004 |
| In a semiconductor light emitting device configured to extract light through a substrate thereof, an electrode layer is formed on a p-type semiconductor layer (such as p-type GaN layer) formed on an active layer, and a nickel layer is formed as a contact metal layer between the elect |
| 6828591 |
Semiconductor light emitting device and fabrication method thereof |
December 7, 2004 |
| Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the |
| 6818465 |
Nitride semiconductor element and production method for nitride semiconductor element |
November 16, 2004 |
| Nitride semiconductor devices and methods of fabricating same are provided. The nitride semiconductor device includes a crystal layer grown into a three-dimensional shape having a side surface portion and an upper layer portion, wherein an electrode layer is formed on the upper layer por |
| 6818463 |
Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device |
November 16, 2004 |
| Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the |
| 6734030 |
Semiconductor light emitting device and method of fabricating semiconductor light emitting devic |
May 11, 2004 |
| Semiconductor light emitting devices and a method of fabricating the semiconductor light emitting devices are provided. The semiconductor light emitting device includes a growth substrate, a first growth layer formed on the growth substrate, a growth obstruction film formed on the first |
| 6623560 |
Crystal growth method |
September 23, 2003 |
| A crystal growth method includes forming a mask layer capable of impeding crystal growth on a substrate in such a way a first nitride semiconductor layer has irregularities at a surface thereof exposed at a window region opened at a part of the mask layer, and growing a second nitride |
| 6576571 |
Process of vapor phase growth of nitride semiconductor |
June 10, 2003 |
| Disclosed herein is a process for vapor phase growth of gallium nitride compound semiconductor which yields uniform crystal layers with good reproducibility. The process comprises forming a first nitride semiconductor layer on a substrate, forming thereon a protective film for crysta |
