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Inventor: Bchir; Omar J.
Address: Gainesville, FL
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6967355 |
Group III-nitride on Si using epitaxial BP buffer layer |
November 22, 2005 |
| A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer. |
| 6596888 |
MOCVD of WNx thin films using imido precursors |
July 22, 2003 |
| Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tu |
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