| Patent Number |
Title Of Patent |
Date Issued |
| 5777849 |
Power semiconductor module having elongate plug contacts |
July 7, 1998 |
| A power semiconductor module is specified. It comprises a housing into which any desired power semiconductor circuit is installed. The power semiconductor circuit has at least two connections, which are passed out of the housing. According to the invention, the connections have the form |
| 5773320 |
Method for producing a power semiconductor module |
June 30, 1998 |
| In the case of a method for producing a power semiconductor module (10), in which a plurality of submodules (12) are arranged on a common support (11), are interconnected by means of a multilayer laminate made of metal layers (13-15) and insulating layers (16, 17), which layers are layer |
| 5748456 |
Power semiconductor module system |
May 5, 1998 |
| A power semiconductor module system includes a plurality of types of power semiconductor modules (310), which each contain one or more controllable power semiconductors (36, 37) and are each accommodated in a module housing (311) with power connections (313-317) and control connections |
| 5744861 |
Power semiconductor module |
April 28, 1998 |
| In a power semiconductor module (10), in which a plurality of individual controllable power semiconductors in the form of semiconductor chips (13, 15, 16) are arranged alongside one another and electrically connected on a common module substrate (11), electrical connection to the surroun |
| 5744860 |
Power semiconductor module |
April 28, 1998 |
| A power semiconductor module (201) is disclosed comprising at least one semiconductor chip, which is arranged on a baseplate (202) and is surrounded by a housing (204) arranged above the baseplate (202), and which can be externally connected by means of connecting lugs (205). The con |
| 5705848 |
Power semiconductor module having a plurality of submodules |
January 6, 1998 |
| In the case of a power semiconductor module (34) having a plurality of submodules (37b), which are arranged next to one another on a common baseplate (35) and are electrically interconnected, and can be externally connected, on the power side in a low-inductance manner by means of co |
| 5661315 |
Controllable power semiconductor component |
August 26, 1997 |
| In the case of a controllable power semiconductor component, which comprises at least one planar, essentially rectangular power semiconductor chip (13), which power semiconductor chip (13) has on its top side a large-area metallization layer (14) for the large-area electrical connect |
| 5574312 |
Low-inductance power semiconductor module |
November 12, 1996 |
| In the case of a power semiconductor module (1) according to the invention, substrates (8) having a power semiconductor assembly (2) are fitted on both sides of a heat sink (3). The power semiconductor assemblies (2) are made contact with by a stack of contact laminates (4), which contac |
| 4788626 |
Power semiconductor module |
November 29, 1988 |
| A power semiconductor module includes a plastic housing having an interior. A substrate in the form of a ceramic plate with upper and lower surfaces is inserted in the housing as a housing bottom. Metallizations are disposed on the upper and lower surfaces of the ceramic plate. The m |
| 4766481 |
Power semiconductor module |
August 23, 1988 |
| A power semiconductor module includes a multi-layered substrate formed of a first ceramic bottom plate, at least one second ceramic plate disposed above and parallel to the first ceramic bottom plate, a metal foil in the form of a textured metallization located between and directly bonde |
