| Patent Number |
Title Of Patent |
Date Issued |
| 7605093 |
Method of fabricating iridium-based materials and structures on substrates, and iridium source r |
October 20, 2009 |
| A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient environment which may fo |
| 7601860 |
Composition and method for low temperature chemical vapor deposition of silicon-containing films |
October 13, 2009 |
| Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si.sub.3N.sub.4), and a method of depositing the silicon precursors on substrates using low |
| 7579496 |
Monosilane or disilane derivatives and method for low temperature deposition of silicon-containi |
August 25, 2009 |
| This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550.degree. C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least |
| 7557073 |
Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist |
July 7, 2009 |
| A method and composition for removing ion-implanted photoresist from semiconductor substrates having such photoresist is described. The removal composition contains supercritical CO.sub.2 (SCCO.sub.2), a co-solvent and a reducing agent for use in removing ion-implanted photoresist. S |
| 7553803 |
Enhancement of silicon-containing particulate material removal using supercritical fluid-based c |
June 30, 2009 |
| A method and composition for removing silicon-containing particulate material, such as silicon nitrides and silicon oxides, from patterned Si/SiO.sub.2 semiconductor wafer surfaces is described. The composition includes a supercritical fluid (SCF), an etchant species, a co-solvent, a |
| 7531679 |
Composition and method for low temperature deposition of silicon-containing films such as films |
May 12, 2009 |
| Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si.sub.3N.sub.4), siliconoxynitride |
| 7531031 |
Copper (I) compounds useful as deposition precursors of copper thin films |
May 12, 2009 |
| Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. |
| 7517809 |
Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations |
April 14, 2009 |
| A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a |
| 7485611 |
Supercritical fluid-based cleaning compositions and methods |
February 3, 2009 |
| Compositions and methods employing supercritical fluids, e.g., supercritical carbon dioxide, for removal of unwanted material from microelectronic device structures and process equipment. One composition of such type, having utility for removing flux and solder perform surface films, |
| 7475588 |
Apparatus and process for sensing fluoro species in semiconductor processing systems |
January 13, 2009 |
| A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF.sub.3, etc. The detector in a preferred structural arrangement employs a microelectromechanical syste |
| 7456488 |
Porogen material |
November 25, 2008 |
| A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film a |
| 7446217 |
Composition and method for low temperature deposition of silicon-containing films |
November 4, 2008 |
| This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300.degree. C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least |
| 7439318 |
Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric cons |
October 21, 2008 |
| An analytical technique for the accurate and precise measurement of trace water in chemical reagents, comprising the steps of combining a chemical reagent comprising .ltoreq.5 ppm water, with hexafluoroacetone (HFA), to form a sample mixture comprising at least the chemical reagent and a |
| 7437060 |
Delivery systems for efficient vaporization of precursor source material |
October 14, 2008 |
| A delivery system for vaporizing and delivering vaporized solid and liquid precursor materials at a controlled rate having particular utility for semiconductor manufacturing applications. The system includes a vaporization vessel, a processing tool and a connecting vapor line therebe |
| 7427567 |
Polishing slurries for copper and associated materials |
September 23, 2008 |
| A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry |
| 7423166 |
Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
September 9, 2008 |
| A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of |
| 7371880 |
Copper (I) compounds useful as deposition precursors of copper thin films |
May 13, 2008 |
| Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. |
| 7371878 |
Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
May 13, 2008 |
| Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device str |
| 7361603 |
Passivative chemical mechanical polishing composition for copper film planarization |
April 22, 2008 |
| A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficien |
| 7344589 |
Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectr |
March 18, 2008 |
| A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable |
| 7342295 |
Porogen material |
March 11, 2008 |
| A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film a |
| 7335239 |
Chemical mechanical planarization pad |
February 26, 2008 |
| A Chemical Mechanical Planarization (CMP) Pad. The CMP pad may be hydrophobic due to the incorporation of metal complexing agents. The CMP pad substantially retaining planarazation characteristics throughout planarization applications. Shearing, hardness, wearing, water absorbtion an |
| 7329768 |
Chemical vapor deposition precursors for deposition of tantalum-based materials |
February 12, 2008 |
| Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to co |
| 7326673 |
Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates |
February 5, 2008 |
| Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include |
| 7323581 |
Source reagent compositions and method for forming metal films on a substrate by chemical vapor |
January 29, 2008 |
| A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing |
| 7296460 |
Apparatus and process for sensing fluoro species in semiconductor processing systems |
November 20, 2007 |
| A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF.sub.3, etc. The detector in a preferred structural arrangement employs a microelectromechanical syste |
| 7294528 |
Supercritical fluid-assisted deposition of materials on semiconductor substrates |
November 13, 2007 |
| Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the |
| 7285308 |
Chemical vapor deposition of high conductivity, adherent thin films of ruthenium |
October 23, 2007 |
| A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both laye |
| 7241912 |
Copper (I) compounds useful as deposition precursors of copper thin films |
July 10, 2007 |
| Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. |
| 7226640 |
Method of fabricating iridium-based materials and structures on substrates |
June 5, 2007 |
| A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient environment which may fo |
| 7223352 |
Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch resid |
May 29, 2007 |
| A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO.sub.2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, |
| 7208427 |
Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturi |
April 24, 2007 |
| Metalorganic precursors of the formula: (R.sub.1R.sub.2N).sub.a-bMX.sub.b wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1.ltoreq.b.ltoreq.(a-1); R.sub.1 and R.sub.2 can be the same as or diff |
| 7198815 |
Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
April 3, 2007 |
| Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device str |
| 7189571 |
Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric cons |
March 13, 2007 |
| An analytical technique for the accurate and precise measurement of trace water in chemical reagents, comprising the steps of combining a chemical reagent comprising .ltoreq.5 ppm water, with hexafluoroacetone (HFA), to form a sample mixture comprising at least the chemical reagent and a |
| 7166732 |
Copper (I) compounds useful as deposition precursors of copper thin films |
January 23, 2007 |
| Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. |
| 7160815 |
Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations |
January 9, 2007 |
| A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a |
| 7119418 |
Supercritical fluid-assisted deposition of materials on semiconductor substrates |
October 10, 2006 |
| Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the |
| 7119052 |
Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers |
October 10, 2006 |
| A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semicon |
| 7108771 |
Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric con |
September 19, 2006 |
| A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant th |
| 7094284 |
Source reagent compositions for CVD formation of high dielectric constant and ferroelectric meta |
August 22, 2006 |
| Chemical vapor deposition (CVD) precursor compositions for forming metal oxide high dielectric constant (.kappa.) thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(.beta.-diketonate).sub.2(OR).sub.2, wherein M is Hf, Zr or |
| 7084080 |
Silicon source reagent compositions, and method of making and using same for microelectronic dev |
August 1, 2006 |
| A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less |
| 7080545 |
Apparatus and process for sensing fluoro species in semiconductor processing systems |
July 25, 2006 |
| A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF.sub.3, etc. The detector in a preferred structural arrangement employs a microelectromechanical syste |
| 7030168 |
Supercritical fluid-assisted deposition of materials on semiconductor substrates |
April 18, 2006 |
| Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the |
| 7029724 |
Composition and method for forming doped A-site deficient thin-film manganate layers on a substr |
April 18, 2006 |
| A method of forming an A site deficient thin film manganate material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for forma |
| 7029373 |
Chemical mechanical polishing compositions for metal and associated materials and method of usin |
April 18, 2006 |
| A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate |
| 7022864 |
Ethyleneoxide-silane and bridged silane precursors for forming low k films |
April 4, 2006 |
| An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a di |
| 7011716 |
Compositions and methods for drying patterned wafers during manufacture of integrated circuitry |
March 14, 2006 |
| Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at |
| 7005392 |
Source reagent compositions for CVD formation of gate dielectric thin films using amide precurso |
February 28, 2006 |
| A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR.sup.1R.sup.2).sub.x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or |
| 7005303 |
Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin fi |
February 28, 2006 |
| A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(.beta.-diketonate) bismuth precursor. Films of amorphous SBT can be formed |
| 6989457 |
Chemical vapor deposition precursors for deposition of tantalum-based materials |
January 24, 2006 |
| Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to co |
