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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Basol; Bulent M.
Address:
Manhattan Beach, CA
No. of patents:
125
Patents:


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Patent Number Title Of Patent Date Issued
8580603 Method of fabricating solar cells with electrodeposited compound interface layers November 12, 2013
A method of fabricating a solar cell involves electroplating a Group IIB-VIA material as a first or sub-layer over a junction partner layer, and then forming a second layer, also of a Group IIB-VIA material over the sub-layer. Both the sub-layer and the second layer comprise Te. The
8258001 Method and apparatus for forming copper indium gallium chalcogenide layers September 4, 2012
A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide f
8252621 Method for forming copper indium gallium chalcogenide layer with optimized gallium content at it August 28, 2012
A method of forming a Group IBIIIAVIA solar cell absorber, which includes a top surface region of less than or equal to 300 nm depth. The Ga/(Ga+In) molar ratio within the top surface region is in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the
8236160 Plating methods for low aspect ratio cavities August 7, 2012
The present invention relates to methods and apparatus for plating a conductive material on a workpiece surface in a highly desirable manner. Using a workpiece-surface-influencing device, such as a mask or sweeper, that preferentially contacts the top surface of the workpiece, relative
8225742 Apparatus for continuous processing of buffer layers for group IBIIIAVIA solar cells July 24, 2012
A deposition method which deposits a CdS buffer layer on a surface of a solar cell from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited in a deposition chamber by heating the surface of the solar cell absorber to cause the transfer
8207440 Photovoltaic modules with improved reliability June 26, 2012
A solar module includes a protective shell with at least two sealed sections formed by moisture barrier sealants. Each sealed section is separated from the adjacent sections and includes at least a portion of a solar cell. In this sectioned configuration, any local defect through the
8207012 Method and apparatus for achieving low resistance contact to a metal based thin film solar cell June 26, 2012
A system and method of forming a thin film solar cell with a metallic foil substrate are provided. After forming a semiconductor absorber film over the front surface of the metallic foil substrate a back surface of the metallic foil substrate is treated using a material removal process
8197703 Method and apparatus for affecting surface composition of CIGS absorbers formed by two-stage pro June 12, 2012
A method and system to modify a surface composition of thin film Group IBIIIA VIA solar cell absorbers having non-uniformly distributed Group IIIA materials or graded materials, such as Indium (In), gallium (Ga) and aluminum (Al). The graded materials distribution varies between the
8192594 Technique and apparatus for depositing thin layers of semiconductors for solar cell fabrication June 5, 2012
The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. In one embodiment, there is p
8188367 Multilayer structure to form absorber layers for solar cells May 29, 2012
A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a partially reacted precursor layer with a dopant structure. The precursor layer including Group IB, Group IIIA and Group VIA materials such as Cu, Ga, In and Se are deposited on a base and partial
8187963 Method of forming back contact to a cadmium telluride solar cell May 29, 2012
A method of forming an ohmic contact to a surface of a Cd and Te containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Te-rich layer on the surface of the Cd and Te containing compound film; depositing an interface layer on the T
8187904 Methods of forming thin layers of photovoltaic absorbers May 29, 2012
A method and a system are provide for forming planar precursor structures which are subsequently converted into thin film solar cell absorber layers. A precursor structure is first formed on the front surface of the foil substrate and then planarized through application of force or p
8163090 Methods structures and apparatus to provide group VIA and IA materials for solar cell absorber f April 24, 2012
A process and apparatus which form a solar cell absorber on a surface of a workpiece as the workpiece and a carrier are advanced through a rapid thermal processing (RTP) chamber. In one embodiment, the surface of the workpiece includes a precursor layer and an absorber constituent is
8156891 Apparatus for simultaneous roll-to-roll wet processing of two workpieces disposed within a singl April 17, 2012
A system is described to deposit a buffer layer onto exposed surfaces of two different solar cell absorber layers of two different flexible workpieces from a process solution including all chemical components of the buffer layer material. The buffer layer is deposited from the process
8153889 Roll-to-roll integration of thin film solar modules April 10, 2012
A photovoltaic module which has at least two solar cells, and a method and system to manufacture such photovoltaic modules. The solar cells are disposed on a surface of an insulating carrier film and an isolation structure is formed between the solar cells to electrically isolate them.
8092667 Electroplating method for depositing continuous thin layers of indium or gallium rich materials January 10, 2012
An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA materia
8066865 Electroplating methods and chemistries for deposition of group IIIA-group via thin films November 29, 2011
An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)--Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin fil
8066863 Electrodeposition technique and apparatus to form selenium containing layers November 29, 2011
A multi step process, which forms a Group VIA material layer, such as a selenium (Se) layer, having a thickness greater than 500 nanometers. The process includes electroplating a Se material layer, which has an amorphous micro-structure and which exhibits high electrical resistivity,
8066840 Finger pattern formation for thin film solar cells November 29, 2011
A method of forming metallic connector patterns for solar cells, whereby an embosser having raised features shaped in the form of a metallic connector pattern is used to attach a portion of a metallic foil to a transparent conductive layer formed on a top transparent surface of a sol
8017861 Substrate preparation for thin film solar cell manufacturing September 13, 2011
A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to reduce the surface roughness such as protrusions that cause shunts. In one embodi
8008113 Technique and apparatus for depositing layers of semiconductors for solar cell and module fabric August 30, 2011
The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. It also provides methods to m
7979969 Method of detecting and passivating a defect in a solar cell July 19, 2011
The present invention provides methods of manufacturing a high efficiency solar cell. In one embodiment, in a solar cell having a grid pattern that channels current, a defect causes an undesired current flow is removed by mechanically removing a portion of the grid pattern, thereby passi
7951280 Gallium electroplating methods and electrolytes employing mixed solvents May 31, 2011
An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to contro
7923281 Roll-to-roll processing method and tools for electroless deposition of thin layers April 12, 2011
A deposition method and a system are provided to deposit a CdS buffer layer on a surface of a solar cell absorber layer of a flexible workpiece from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited from the deposition solution wh
7897416 Composition control for photovoltaic thin film manufacturing March 1, 2011
The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a
7892413 Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin f February 22, 2011
Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a
7867551 Processing method for group IBIIIAVIA semiconductor layer growth January 11, 2011
A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a partially reacted precursor layer with a dopant structure. The precursor layer including Group IB, Group IIIA and Group VIA materials such as Cu, Ga, In and Se are deposited on a base and partially
7854963 Method and apparatus for controlling composition profile of copper indium gallium chalcogenide l December 21, 2010
The present invention relates to method and apparatus for preparing thin films of semiconductor films for radiation detector and photovoltaic applications. In one aspect, the present invention is directed to a method of forming a Cu(In,Ga)(S,Se).sub.2 layer with substantially uniform
7842882 Low cost and high throughput deposition methods and apparatus for high density semiconductor fil November 30, 2010
The present invention describes a method of obtaining an absorber layer for a solar cell, That method includes depositing a preparatory material comprising a melt of at least one Group IIIA material on a base to form a precursor layer, and reacting the precursor layer with at least one G
7833821 Method and apparatus for thin film solar cell manufacturing November 16, 2010
The present invention provides a method of making a Cu--In--Ga sputtering target by melting Cu, In and Ga, Cu and In or Cu and Ga to form a uniform melt with a pre-determined stoichiometry, which melt is sprayed to cause sprayed uniform melt particles to solidify into Cu--In--Ga particle
7829785 Thin film solar cell with finger pattern November 9, 2010
The present invention relates to thin film solar cell structures and methods of manufacturing them. In particular and in one aspect the present invention is related to apparatus and methods for forming a solar cell structure in which an insulator film is disposed over a region of a c
7825329 Thin film solar cell manufacturing and integration November 2, 2010
A method of forming a Group IBIIIAVIA solar cell absorber which includes an active portion and an electrically resistive portion. The absorber is interposed between a base layer and a transparent conductive layer. The electrically resistive portion increases resistance between the base
7824947 Method to improve flexible foil substrate for thin film solar cell applications November 2, 2010
A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing
7795067 Semitransparent flexible thin film solar cells and modules September 14, 2010
A method of manufacturing partially light transparent thin film solar cells generally includes forming a solar cell structure stack and forming multiple openings through the solar cell structure stack. The solar cell structure stack includes a flexible foil substrate, a contact layer
7754061 Method for controlling conductor deposition on predetermined portions of a wafer July 13, 2010
A plating apparatus and method for deposition of a conductive material on a semiconductor wafer having surface portions and cavity portions. A differential in an adsorbed concentration of an additive, including accelerators or suppressors, between a surface portion and a cavity porti
7736940 Technique and apparatus for depositing layers of semiconductors for solar cell and module fabric June 15, 2010
The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. It also provides methods to m
7736913 Composition control for photovoltaic thin film manufacturing June 15, 2010
The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a
7731833 Plating method and apparatus for controlling deposition on predetermined portions of a workpiece June 8, 2010
The present invention relates to methods and apparatus for plating a conductive material on a workpiece surface in a highly desirable manner. Using a workpiece-surface-influencing device, such as a mask or sweeper, that preferentially contacts the top surface of the workpiece, relative
7713773 Contact layers for thin film solar cells employing group IBIIIAVIA compound absorbers May 11, 2010
The present invention provides methods and apparatus for deposition of contact layers for Group IBIIIAVIA solar cells using electrodeposition and/or electroless deposition approaches, and solar cells that result therefrom. In one aspect of the invention, the solar cell that results i
7704880 Method of forming contact layers on substrates April 27, 2010
A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined region of the conductive
7670473 Workpiece surface influencing device designs for electrochemical mechanical processing and metho March 2, 2010
The present invention is directed to a top surface of a workpiece surface influencing device and a method of using the same. The top surface of the workpiece surface influencing device is adapted for use in an electrochemical mechanical processing apparatus in which a solution become
7648622 System and method for electrochemical mechanical polishing January 19, 2010
A method and apparatus for electropolishing a conductive surface of a semiconductor wafer. The apparatus includes a polisher having at least one first electrode and at least one second electrode separated from one another by an isolation region. A moving mechanism rotates the wafer w
7625814 Filling deep features with conductors in semiconductor manufacturing December 1, 2009
A method of filling a conductive material in a three dimensional integration feature formed on a surface of a wafer is disclosed. The feature is optionally lined with dielectric and/or adhesion/barrier layers and then filled with a liquid mixture containing conductive precursor, such
7585547 Method and apparatus to form thin layers of materials on a base September 8, 2009
The present invention relates to method and apparatus for preparing thin films of materials for various applications including electronic devices such as solar cells. In one aspect, each of the method and apparatus passing an electrical current through at least one of the base or sheet
7582506 Precursor containing copper indium and gallium for selenide (sulfide) compound formation September 1, 2009
The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials
7578923 Electropolishing system and process August 25, 2009
The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a
7550070 Electrode and pad assembly for processing conductive layers June 23, 2009
An electrode assembly includes a distribution plate having a plurality of grooves that communicate with openings in an overlying polishing pad layer. The grooves include end openings that allow for draining of process solution, both during processing and subsequent cleaning/rinsing o
7541067 Method and apparatus for continuous processing of buffer layers for group IBIIIAVIA solar cells June 2, 2009
A deposition method which deposits a CdS buffer layer on a surface of a solar cell from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited in a deposition chamber by heating the surface of the solar cell absorber to cause the transfer
7537955 Low temperature nano particle preparation and deposition for phase-controlled compound film form May 26, 2009
The present invention is directed to different methods used in the formation of an ink, as well as being directed to the formation of layers used in the fabrication of a solar cell, particularly the absorber layer. In one embodiment, the invention is directed to formulating an ink co
7521344 Method of forming semiconductor compound film for fabrication of electronic device and film prod April 21, 2009
A process of forming a compound film includes formulating a nano-powder material with a controlled overall composition and including particles of one solid solution The nano-powder material is deposited on a substrate to form a layer on the substrate, and the layer is reacted in at least
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