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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Basceri; Cem
Address:
Boise, ID
No. of patents:
154
Patents:


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Patent Number Title Of Patent Date Issued
8216377 Method and system for binding halide-based contaminants July 10, 2012
A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that cont
7922818 Method and system for binding halide-based contaminants April 12, 2011
A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that cont
7906393 Methods for forming small-scale capacitor structures March 15, 2011
The present disclosure provides small scale capacitors (e.g., DRAM capacitors) and methods of forming such capacitors. One exemplary implementation provides a method of fabricating a capacitor that includes sequentially forming a first electrode, a dielectric layer, and a second elec
7794787 Methods of depositing materials over substrates, and methods of forming layers over substrates September 14, 2010
The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is util
7741175 Methods of forming capacitors June 22, 2010
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containi
7648873 Methods of forming capacitors January 19, 2010
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containi
7647886 Systems for depositing material onto workpieces in reaction chambers and methods for removing by January 19, 2010
Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers are disclosed herein. In one embodiment, the system includes a gas phase reaction chamber, a first exhaust line coupled to the reaction chamber, first and s
7618890 Methods for forming conductive structures and structures regarding same November 17, 2009
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal
7611971 Method of removing residual contaminants from an environment November 3, 2009
A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting the aluminum compound with the halogenated material to form a gaseous reaction product
7550345 Methods of forming hafnium-containing materials June 23, 2009
The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and or
7544388 Methods of depositing materials over substrates, and methods of forming layers over substrates June 9, 2009
The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is util
7535695 DRAM cells and electronic systems May 19, 2009
The invention includes capacitor constructions which have a layer of aluminum oxide between a high-k dielectric material and a layer containing titanium and nitrogen. The layer containing titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride.
7498057 Deposition methods March 3, 2009
A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the
7488514 Methods of forming barium strontium titanate layers February 10, 2009
A chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer. A substrate is positioned within a reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided wit
7482239 Methods of forming integrated circuitry January 27, 2009
In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the opening over at least upper portions of sidewalls of the opening. The spacing layer is formed
7457184 Dielectric relaxation memory November 25, 2008
A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for the capacitor struc
7453115 Dielectric relaxation memory November 18, 2008
A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for the capacitor struc
7444934 Supercritical fluid-assisted direct write for printing integrated circuits November 4, 2008
High resolution patterns provided on a surface of a semiconductor substrate and methods of direct printing of such high resolution patterns are disclosed. The high resolution patterns may have dimensions less than 0.1 micron and are formed by a direct writing method employing a super
7436067 Methods for forming conductive structures and structures regarding same October 14, 2008
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g., ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal
7422635 Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on September 9, 2008
The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces positioned in a process
7414297 Capacitor constructions August 19, 2008
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across
7399499 Methods of gas delivery for deposition processes and methods of depositing material on a substra July 15, 2008
Methods for depositing material onto workpieces, methods of controlling the delivery of gases in deposition processes, and apparatus for depositing materials onto workpieces. One embodiment of a method for depositing material onto a workpiece comprises placing a micro-device workpiec
7396570 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers July 8, 2008
Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl.sub.4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl.sub.4 to silane for a first period of time. The ratio is sufficien
7393563 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers July 1, 2008
Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl.sub.4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl.sub.4 to silane for a first period of time. The ratio is sufficient
7390712 Methods of enhancing capacitors in integrated circuits June 24, 2008
Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first electrode, a dielectric that includes ditantalum pentaoxide, and a second electrode having a c
7388248 Dielectric relaxation memory June 17, 2008
A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for the capacitor struc
7378354 Atomic layer deposition methods May 27, 2008
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is forme
7374993 Methods of forming capacitors May 20, 2008
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containi
7368382 Atomic layer deposition methods May 6, 2008
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is forme
7368381 Methods of forming materials May 6, 2008
The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor is relatively reac
7358554 Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product fo April 15, 2008
An apparatus for depositing a thin film on a substrate and product produced thereby are disclosed. In particular, deposition of the thin film is carried out on the substrate having an applied pressure. This applied pressure flexes the substrate to reduce in-plane stresses, wherein re
7352023 Constructions comprising hafnium oxide April 1, 2008
The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and or
7329573 Methods of forming capacitors February 12, 2008
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containi
7326984 MIS capacitor and method of formation February 5, 2008
An MIS capacitor with low leakage and high capacitance is disclosed. A layer of hemispherical grained polysilicon (HSG) is formed as a lower electrode. Prior to the dielectric formation, the hemispherical grained polysilicon layer may be optionally subjected to a nitridization or ann
7323738 MIS capacitor and method of formation January 29, 2008
An MIS capacitor with low leakage and high capacitance is disclosed. A layer of hemispherical grained polysilicon (HSG) is formed as a lower electrode. Prior to the dielectric formation, the hemispherical grained polysilicon layer may be optionally subjected to a nitridization or ann
7323064 Supercritical fluid technology for cleaning processing chambers and systems January 29, 2008
The invention includes a method of cleaning a processing chamber by introducing supercritical fluid into the processing chamber. A residue over an internal chamber surface is contacted with the supercritical fluid to remove the residue from the surface. The invention also includes a
7311942 Method for binding halide-based contaminants during formation of a titanium-based film December 25, 2007
A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that cont
7309889 Constructions comprising perovskite-type dielectric December 18, 2007
The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has
7303991 Atomic layer deposition methods December 4, 2007
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is forme
7279398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials October 9, 2007
The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure with
7274061 Capacitor constructions September 25, 2007
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across
7274059 Capacitor constructions September 25, 2007
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across
7273791 Methods for forming a conductive structure using oxygen diffusion through one metal layer to oxi September 25, 2007
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal
7273660 Mixed composition interface layer and method of forming September 25, 2007
An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first che
7271077 Deposition methods with time spaced and time abutting precursor pulses September 18, 2007
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. The first precurso
7258892 Methods and systems for controlling temperature during microfeature workpiece processing, e.g., August 21, 2007
The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method th
7253102 Methods for forming and integrated circuit structures containing enhanced-surface-area conductiv August 7, 2007
An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as by chemical vapor
7253085 Deposition methods August 7, 2007
The invention includes a method for selective deposition of semiconductor material. A substrate is placed within a reaction chamber. The substrate comprises a first surface and a second surface. The first and second surfaces are exposed to a semiconductor material precursor under con
7253076 Methods for forming and integrated circuit structures containing ruthenium and tungsten containi August 7, 2007
Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such ca
7247561 Method of removing residual contaminants from an environment July 24, 2007
A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting the aluminum compound with the halogenated material to form a gaseous reaction product
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