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Inventor:
Baba; Shiro
Address:
Kokubunji, JP
No. of patents:
37
Patents:




Patent Number Title Of Patent Date Issued
7558944 Microcomputer July 7, 2009
A built-in memory is divided into the following two types: first memories 5 and 7 and second memories 4 and 6, and made accessible in parallel by third buses XAB and XDB and second buses YAB and YDB respectively. Thereby, a CPU core 2 can simultaneously transfer two data values from
7505329 Data line disturbance free memory block divided flash memory and microcomputer having flash memo March 17, 2009
A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units
7363466 Microcomputer April 22, 2008
A built-in memory is divided into the following two types: first memories 5 and 7 and second memories 4 and 6, and made accessible in parallel by third buses XAB and XDB and second buses YAB and YDB respectively. Thereby, a CPU core 2 can simultaneously transfer two data values from
7295476 Data line disturbance free memory block divided flash memory and microcomputer having flash memo November 13, 2007
A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units
7184321 Data line disturbance free memory block divided flash memory and microcomputer having flash memo February 27, 2007
A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units
7069423 Microcomputer June 27, 2006
A built-in memory is divided into the following two types: first memories 5 and 7 and second memories 4 and 6, and made accessible in parallel by third buses XAB and XDB and second buses YAB and YDB respectively. Thereby, a CPU core 2 can simultaneously transfer two data values from
6999350 Data line disturbance free memory block divided flash memory and microcomputer having flash memo February 14, 2006
A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units
6996700 Microcomputer and dividing circuit February 7, 2006
Herein disclosed is a microcomputer MCU adopting the general purpose register method. The microcomputer is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decod
6889240 Data processing device having a central processing unit and digital signal processing unit May 3, 2005
In microcomputers and digital signal processors in which a central processing unit for controlling the entire system and a digital signal processing unit having a product sum function required to process digital signals efficiently are mounted on one and the same chip, an increase in
6804152 Method for manufacturing a printed board on which a semiconductor device having two modes is mou October 12, 2004
A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of p
6690603 Microcomputer including a flash memory that is two-way programmable February 10, 2004
A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of p
6668266 Data processing device having a central processing unit and digital signal processing unit December 23, 2003
In microcomputers and digital signal processors in which a central processing unit for controlling the entire system and a digital signal processing unit having a product sum function required to process digital signals efficiently are mounted on one and the same chip, an increase in
6493271 Data line disturbance free memory block divided flash memory and microcomputer having flash memo December 10, 2002
A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of p
6434690 Microprocessor having a DSP and a CPU and a decoder discriminating between DSP-type instructions August 13, 2002
A built-in memory is divided into the following two types: first memories 5 and 7 and second memories 4 and 6, and made accessible in parallel by third buses XAB and XDB and second buses YAB and YDB respectively. Thereby, a CPU core 2 can simultaneously transfer two data values from the
6414878 Data line disturbance free memory block divided flash memory and microcomputer having flash memo July 2, 2002
A semiconductor device having and electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of
6405302 Microcomputer June 11, 2002
A built-in memory is divided into the following two types: first memories 5 and 7 and second memories 4 and 6, and made accessible in parallel by third buses XAB and XDB and second buses YAB and YDB respectively. Thereby, a CPU core 2 can simultaneously transfer two data values from the
6400609 Data line disturbance free memory block divided flash memory and microcomputer having flash memo June 4, 2002
A semiconductor device having and electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of
6343357 Microcomputer and dividing circuit January 29, 2002
A microcomputer MCU adopting the general purpose register method is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding as in the RISC machine having a fixed l
6335879 Method of erasing and programming a flash memory in a single-chip microcomputer having a process January 1, 2002
A semiconductor device having and electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of
6272620 Central processing unit having instruction queue of 32-bit length fetching two instructions of 1 August 7, 2001
A microcomputer MCU adopting the general purpose register method is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding as in the RISC machine having a fixed l
6253308 Microcomputer having variable bit width area for displacement and circuit for handling immediate June 26, 2001
A microcomputer CMU adopting the general purpose register method is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding as in the RISC machine having a fixed l
6205535 Branch instruction having different field lengths for unconditional and conditional displacement March 20, 2001
A branch instruction format has different respective field lengths for conditional branch instructions and unconditional branch instructions. A conditional branch instruction has a first bit length and a first area for a displacement designating an address to be jumped, wherein the first
6181598 Data line disturbance free memory block divided flash memory and microcomputer having flash memo January 30, 2001
A semiconductor device having and electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of
6166953 Data line disturbance free memory block divided flash memory and microcomputer having flash memo December 26, 2000
A semiconductor device having and electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of
6131154 Microcomputer having variable bit width area for displacement October 10, 2000
Herein disclosed is a microcomputer MCU adopting the general purpose register method. The microcomputer is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding
6130836 Semiconductor IC device having a control register for designating memory blocks for erasure October 10, 2000
A semiconductor integrated circuit device having a processing unit and a memory which stores data to be processed by the processing unit and which provides data to the processing unit through the data bus in response to accessing instructions from the processing unit through the address
6122724 Central processing unit having instruction queue of 32-bit length fetching two instructions of 1 September 19, 2000
A microcomputer MCU adopting the general purpose register method is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding as in the RISC machine having a fixed l
6064593 Semiconductor integrated circuit device having an electrically erasable and programmable nonvola May 16, 2000
A semiconductor device having and electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of
6026020 Data line disturbance free memory block divided flash memory and microcomputer having flash memo February 15, 2000
A single chip semiconductor integrated circuit device having a central processing unit (CPU) and a flash memory which stores data to be processed by the CPU and which provides data to the CPU through the data bus in response to accessing instructions from the CPU through the address bus.
5991545 Microcomputer having variable bit width area for displacement and circuit for handling immediate November 23, 1999
Herein disclosed is a microcomputer MCU adopting the general purpose register method. The microcomputer is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding
5969976 Division circuit and the division method thereof October 19, 1999
A division method and circuit performs a division for signed data by adding or subtracting a divisor to or from the dividend or the partial remainder from the division, according to the sign of the divisor or the dividend and the partial remainder to acquire a new partial remainder. The
5884092 System for maintaining fixed-point data alignment within a combination CPU and DSP system March 16, 1999
In microcomputers and digital signal processors in which a central processing unit for controlling the entire system and a digital signal processing unit having a product sum function required to process digital signals efficiently are mounted on one and the same chippthis invention
5867726 Microcomputer February 2, 1999
A built-in memory is divided into the following two types: first memories 5 and 7 and second memories 4 and 6, and made accessible in parallel by third buses XAB and XDB and second buses YAB and YDB respectively. Thereby, a CPU core 2 can simultaneously transfer two data values from the
5768194 Data line disturbance free memory block divided flash memory and microcomputer having flash memo June 16, 1998
A single chip semiconductor integrated circuit device having a central processing unit (CPU) and a flash memory which stores data to be processed by the CPU and which provides data to the CPU through the data bus in response to accessing instructions from the CPU through the address bus.
5682545 Microcomputer having 16 bit fixed length instruction format October 28, 1997
Herein disclosed is a microcomputer MCU adopting the general purpose register method. The microcomputer is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding
5666510 Data processing device having an expandable address space September 9, 1997
A CPU has an upper compatibility with a low-order CPU to expand a continuously usable address space relatively. For latching data information, registers are constructed for being an address register with a bit number larger than the address bit number of a low-order CPU. The data inf
5581503 Data line disturbance free memory block divided flash memory and microcomputer having flash memo December 3, 1996
An electrically rewritable flash memory device which has a memory cell array arranged in rows and columns of memory cells and which is divided into a plurality of memory blocks having different memory capacities. Each memory block having one or more rows of memory cells. A common voltage


 
 
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