| Patent Number |
Title Of Patent |
Date Issued |
| 6191493 |
Resin seal semiconductor package and manufacturing method of the same |
February 20, 2001 |
| Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a |
| 5920770 |
Resin seal semiconductor package and manufacturing method of the same |
July 6, 1999 |
| Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a |
| 5753973 |
Resin seal semiconductor package |
May 19, 1998 |
| Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a |
| 5656863 |
Resin seal semiconductor package |
August 12, 1997 |
| Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a |
| 5565379 |
Method of manufacturing a semiconductor device having a bump electrode by a proximity exposure m |
October 15, 1996 |
| In a process for manufacturing a semiconductor device having a bump electrode, a pad electrode for external connection is formed on a semiconductor substrate, and then a insulating layer having a opening exposing a predetermined portion at an upper surface of the pad electrode is for |
