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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Aspar; Bernard
Address:
Rives, FR
No. of patents:
53
Patents:


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Patent Number Title Of Patent Date Issued
8298915 Method of transferring a circuit onto a ground plane October 30, 2012
Method for forming a semi-conducting structure includes the formation of at least one part of a circuit or a component, in or on a superficial layer of a substrate, the substrate including a buried layer underneath the superficial layer, and an underlying layer serving as first support,
8268703 Surface roughening process September 18, 2012
A process of forming a rough interface in a semiconductor substrate. The process includes the steps of depositing a material on a surface of the substrate, forming a zone of irregularities in the material, and forming a rough interface in the semiconductor substrate by a thermal oxidatio
8193069 Stacked structure and production method thereof June 5, 2012
The invention relates to a method of producing a stacked structure. The inventive method comprises the following steps consisting in: a) using a first plate (1) which is, for example, made from silicon, and a second plate (5) which is also, for example, made from silicon, such that at
8101503 Method of producing a thin layer of semiconductor material January 24, 2012
A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced apart by cavities. A method of producing the thin layer of semiconductor material includes
8044465 Method for producing partial SOI structures comprising zones connecting a superficial layer and October 25, 2011
The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a first support, patterns in a first material, a step of forming a semiconductor layer,
7902038 Detachable substrate with controlled mechanical strength and method of producing same March 8, 2011
The invention relates to a method for production of a detachable substrate, comprising a method step for the production of an interface by means of fixing, using molecular adhesion, one face of a layer on one face of a substrate, in which, before fixing, a treatment stage for at leas
7883994 Process for the transfer of a thin film February 8, 2011
A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can
7807548 Process of forming and controlling rough interfaces October 5, 2010
The invention provides a method for forming a semiconductor component with a rough buried interface. The method includes providing a first semiconductor substrate having a first surface of roughness R1. The method further includes thermally oxidizing the first surface of the first se
7807482 Method for transferring wafers October 5, 2010
The invention concerns a method for preparing a thin layer (28) or a chip to be transferred onto another substrate, this method including the realization, above the surface of said thin layer or said chip, of at least one layer, called adhesive layer (25), and of at least one layer,
7737000 Process for the collective fabrication of microstructures consisting of superposed elements June 15, 2010
The invention relates to the collective fabrication of superposed microstructures, such as an integrated circuit and a protective cover. Individual structures each comprising superposed first and second elements are fabricated collectively. The first elements (for example, integrated
7713369 Detachable substrate or detachable structure and method for the production thereof May 11, 2010
The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z1) whi
7709305 Method for producing partial SOI structures comprising zones connecting a superficial layer and May 4, 2010
The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a first support, patterns in a first material, a step of forming a semiconductor layer,
7615463 Method for making thin layers containing microcomponents November 10, 2009
The invention concerns a method for making thin layers containing microcomponents using a substrate. The method includes the following steps: a) provides a substrate; b) local implantation of at least a gaseous species in said substrate perpendicular to a plurality of implantation zo
7498245 Embrittled substrate and method for making same March 3, 2009
This invention relates to a substrate (1) weakened by the presence of a micro-cavities zone, the micro-cavities zone (4') delimiting a thin layer (5) with one face (2) of the substrate (1), some or all of the gaseous species having been eliminated from the micro-cavities (4').The inventi
7498234 Method of producing a thin layer of semiconductor material March 3, 2009
The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the
7494897 Method of producing mixed substrates and structure thus obtained February 24, 2009
The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which
7368030 Intermediate suction support and its utilisation for producing a thin film structure May 6, 2008
The present invention relates to an intermediate suction support. The support has at least one suction surface (62) intended to receive a first face of at least one substrate comprising an embrittled layer, a film thus being defined between the first face of the substrate and the emb
7264996 Method for separating wafers bonded together to form a stacked structure September 4, 2007
This invention relates to a method for separating at least two wafers (1, 2) bonded together to form a stacked structure. At least one bending force is applied to all or part of the stacked structure to separate the stacked structure into two parts along a required separation plane.A
7258743 Composite structure with a uniform crystal orientation and the method of controlling the crystal August 21, 2007
This invention relates to a process for controlling the orientation of secondary structures (A1, A2) with at least a crystalline part during the transfer of secondary structures from a primary structure (A) on which the secondary structures have an initial crystalline orientation ide
7238598 Formation of a semiconductor substrate that may be dismantled and obtaining a semiconductor elem July 3, 2007
A method for forming a semiconductor substrate that can be dismantled, comprising the following steps: introduction of gaseous species in the substrate according to conditions enabling the constitution of an embrittled layer by the presence in said layer of micro-cavities and/or micr
7229899 Process for the transfer of a thin film June 12, 2007
A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can
7205211 Method for handling semiconductor layers in such a way as to thin same April 17, 2007
This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of: a) obtaining a support handle with a face acting as a bonding face; b) preparing the front face of the wafer,
7067396 Method of producing a thin layer of semiconductor material June 27, 2006
The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the
7060590 Layer transfer method June 13, 2006
The invention relates to a method of removing a peripheral zone of adhesive while using a layer of adhesive in the process of assembling and transferring a layer of material from a source substrate to a support substrate. The method is remarkable in that it includes bonding the two s
7029548 Method for cutting a block of material and forming a thin film April 18, 2006
A process for cutting out a block of material includes a step of introducing ions in the block thereby forming an embrittled zone and defining at least one superficial part of the block. The method also includes a step of forming at least one separation initiator at the level of the
6974759 Method for making a stacked comprising a thin film adhering to a target substrate December 13, 2005
The invention relates to a process for manufacturing a stacked structure comprising at least one thin layer bonding to a target substrate, comprising the following steps:a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first co
6959863 Method for selectively transferring at least an element from an initial support onto a final sup November 1, 2005
The invention concerns a process of selective transfer of labels from an initial support to a final support, each label including at least one element constituent of a microelectronic and/or optoelectronic and/or acoustic and/or mechanical device, with the elements made in a surface
6946365 Method for producing a thin film comprising introduction of gaseous species September 20, 2005
A method for making a thin layer from a structure. A stacked structure is made of a first part designed to facilitate the introduction of gaseous species and of a second part, the second part having a first free face and a second face integral with the first part. A gaseous species is
6939782 Method for producing thin layers on a specific support and an application thereof September 6, 2005
The invention relates to a method for producing a thin layer (8) containing at least one component (6, 6A, 6B) comprising:--a preparation step, wherein an added layer (2, 3, 4) is created on a support (1), at least one part (2) of said layer being adapted for local embrittling and said
6913971 Layer transfer methods July 5, 2005
Methods for transferring a layer of material from a source substrate having a zone of weakness onto a support substrate to fabricate a composite substrate are described. An implementation includes forming at least one recess in at least one of the source and support substrates, depositin
6909445 High density element structure formed by assembly of layers and method for making same June 21, 2005
A structure including a sequence of elements for sending or receiving a signal along an axis. Two successive elements along the direction of the axis are offset with respect to each other along the direction perpendicular to the axis. The structure includes at least two layers of mat
6853414 Flat liquid crystal, screen operating in reflective mode and method for manufacturing this scree February 8, 2005
This invention consists of transforming a liquid crystal flat screen, normally designed to operate in transmissive mode, to enable it to operate in reflective mode so as to consume less energy. To do this, some screen elements inserted between the liquid crystal layer (3) and the reflect
6821376 Method for separating two elements and a device therefor November 23, 2004
A process and device for separating two semi-conductor substrate wafers along an interface. The process includes forming a cavity, and initiating separation by applying force to the interface through the cavity. The device utilizes fluid or gas, and pressure chambers, to subject adherent
6809044 Method for making a thin film using pressurization October 26, 2004
The invention relates to a process for making a thin film starting from a substrate (1) of a solid material with a plane face (2) comprising: the implantation of gaseous compounds in the substrate (1) to make a layer of micro-cavities (4) at a depth from the said plane face (2) corres
6809009 Method of producing a thin layer of semiconductor material October 26, 2004
The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the for
6808967 Method for producing a buried layer of material in another material October 26, 2004
The aim of the invention is a method for producing a layer (2) of a first material embedded in a substrate (1) comprising at least one second material. The method comprises the following stages: formation in the substrate (1), at the level of the desired embedded layer, of a layer of
6756286 Method for transferring a thin film comprising a step of generating inclusions June 29, 2004
A process for transfer of at least one thin film of solid material delimited in an initial substrate. The process includes a step in which a layer of inclusions is formed in the initial substrate at a depth corresponding to the required thickness of the thin film. These inclusions ar
6756285 Multilayer structure with controlled internal stresses and making same June 29, 2004
A multilayer structure with controlled internal stresses comprising, in this order, a first main layer (110a), at least a first constraint adaptation layer (130) in contact with the first main layer, at least a second stress adaptation layer (120) put into contact by adhesion with sa
6593036 Structure for a reflection lithography mask and method for making same July 15, 2003
The invention concerns a structure for a lithographic reflection mask comprising a receive medium (12) on which is fixed a reflector (11) including at least one layer, the reflector (11) being fixed to the receive medium (12) in a reverse manner relative to a manufacturing medium (10
6465327 Method for producing a thin membrane and resulting structure with membrane October 15, 2002
The invention relates to a method for producing a thin membrane, comprising the following steps: implanting gas species, through one surface of a first substrate (10) and through one surface of a second substrate (20), which in said substrates are able to create microcavities (11, 21)
6429094 Treatment process for molecular bonding and unbonding of two structures August 6, 2002
Process for providing separable structures comprising providing at least two structures wherein at least one structure contains a diffusable element contacting said structures under conditions providing molecular bonding of said structures along a bonding interface and heating said b
6403450 Heat treatment method for semiconductor substrates June 11, 2002
The invention concerns a method for treating, a substrate comprising a semi-conducting layer (4) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a step for forming, an oxide layer (6) at the semi-conducting layer (4) surface, carried out
6362077 Structure comprising a thin layer of material made up of conductive zones and insulating zones a March 26, 2002
A structure comprising a thin layer (2) that can be integral with a support (3), the thin layer being a layer of a semiconductor material made insulating by ion implantation except for at least one zone that permits a vertical electrical connection through the entire thickness of the thi
6335258 Method for making a thin film on a support and resulting structure including an additional thinn January 1, 2002
The present invention relates to a production method for a thin film on a support that includes an ionic implantation stage in order to demarcate the thin film in a substrate, the aim of the ionic implantation being to create a layer of micro-cavities in the substrate, a stage to bond th
6316333 Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone an November 13, 2001
The invention relates to a process for obtaining a thin film from a substrate, the film being delimited in the substrate by ionic implantation and by heat treatment inducing a fracture line along which the film can be separated from the rest of the substrate. A particular area, for examp
6303468 Method for making a thin film of solid material October 16, 2001
The invention relates to a method of manufacturing a thin film of solid material comprising at least the following steps:a step of ionic implantation through one face of a substrate of said solid materials using ions capable of creating in the volume of the substrate and at a depth close
6225192 Method of producing a thin layer of semiconductor material May 1, 2001
The invention relates to a method of producing a thin layer of semiconductor material including:a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formati
6204079 Selective transfer of elements from one support to another support March 20, 2001
A process for the selective transfer of elements from a transfer support to a reception support, the elements bonding through a first face to the transfer support according to a defined bonding energy, the elements each having a second face configured to contact with the reception suppor
6197695 Process for the manufacture of passive and active components on the same insulating substrate March 6, 2001
This invention relates to a process for the manufacture of one electronic structure comprising at least one active component and at least one passive component or element on a support substrate made of an insulating material. A characteristic process comprises the following steps:make th
6190998 Method for achieving a thin film of solid material and applications of this method February 20, 2001
A method for making a thin film of solid material, including bombarding one face of a substrate of the solid material with at least one of rare gas ions and hydrogen gas ions so as to create a layer of microcavities seperating the substrate into two regions at a depth neighboring the
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