| Patent Number |
Title Of Patent |
Date Issued |
| RE38613 |
Method for growing a nitride compound semiconductor |
October 5, 2004 |
| A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, |
| 7532654 |
Laser diode |
May 12, 2009 |
| A laser diode capable of effectively inhibiting effects of return light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer |
| 7510887 |
Semiconductor laser device |
March 31, 2009 |
| This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal forme |
| 7248612 |
Semiconductor laser device with multi-dimensional-photonic-crystallized region |
July 24, 2007 |
| This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal forme |
| 7176499 |
Method of manufacturing a semiconductor light emitting device, semiconductor light emitting devi |
February 13, 2007 |
| When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first |
| 7091056 |
Method of manufacturing a semiconductor light emitting device, semiconductor light emitting devi |
August 15, 2006 |
| When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III V compound semiconductor substrate composed of a first |
| 6682991 |
Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor |
January 27, 2004 |
| When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an ox |
| 6620641 |
Semiconductor light emitting device and its manufacturing method |
September 16, 2003 |
| A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact |
| 6475820 |
Method for growing semiconductor layer and method for fabricating semiconductor light emitting e |
November 5, 2002 |
| The present invention provides a method for growing a semiconductor layer by which the size of generable voids is controllable, inclination of the c-axis of the semiconductor crystal is avoidable and the defects in the semiconductor layer is reducible, in which a first semiconductor laye |
| 6471769 |
Method of manufacturing a nitride series III-V group compound semiconductor |
October 29, 2002 |
| When nitride series III-V group compound semiconductor is manufactured by gas phase growing using starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammoni |
| 6413312 |
Method for growing a nitride compound semiconductor |
July 2, 2002 |
| A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, |
| 6362016 |
Semiconductor light emitting device |
March 26, 2002 |
| A luminous intensity of a semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors is improved by having a thickness d of a light emitting layer (active layer) of the semiconductor light emitting device having a multi-la |
| 6104039 |
P-type nitrogen compound semiconductor and method of manufacturing same |
August 15, 2000 |
| A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thi |
| 6081001 |
Nitride semiconductor light emitting device |
June 27, 2000 |
| A luminous intensity of a semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors is improved by having a thickness d of a light emitting layer (active layer) of the semiconductor light emitting device having a multi-la |
| 6043140 |
Method for growing a nitride compound semiconductor |
March 28, 2000 |
| A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, |
| 5863811 |
Method for growing single crystal III-V compound semiconductor layers on non single crystal III- |
January 26, 1999 |
| A method for growing a single crystal III-V compound semiconductor layer, in which grown by vapor deposition on a first single crystal III-V compound semiconductor layer including at least Ga and N is a second single crystal III-V compound semiconductor layer different from the first |
