| Patent Number |
Title Of Patent |
Date Issued |
| 7589364 |
Electrically rewritable non-volatile memory element and method of manufacturing the same |
September 15, 2009 |
| A non-volatile memory element includes a first interlayer insulation layer 11 having a first through-hole 11a, a second interlayer insulation layer 12 having a second through-hole 12a formed on the first interlayer insulation layer 11, a bottom electrode 13 provided in the first thro |
| 7582889 |
Electrically rewritable non-volatile memory element and method of manufacturing the same |
September 1, 2009 |
| A non-volatile memory element includes a lower electrode, an upper electrode, a recording layer arranged between the lower electrode and the upper electrode and containing a phase change material, and a bit line directly arranged on the upper electrode. The bit line is formed to be o |
| 7554147 |
Memory device and manufacturing method thereof |
June 30, 2009 |
| A memory device in which both DRAM and phase-change memory (PCRAM) are mounted is provided with a DRAM bit line, a PCRAM bit line or a PCRAM source line formed on an conductive layer shared with the DRAM bit line, and a sense amplifier connected between the DRAM bit line and the PCRAM |
| 7550756 |
Semiconductor memory |
June 23, 2009 |
| In a semiconductor memory comprising a matrix of memory cells each composed of one transistor and one chalcogenide layer as a memory element, no chalcogenide layer is disposed at a joint between an upper electrode wire connected to the chalcogenide layer and another wiring layer. |
| 7541607 |
Electrically rewritable non-volatile memory element and method of manufacturing the same |
June 2, 2009 |
| A non-volatile memory element includes a bottom electrode 12, a bit line 14 provided on the bottom electrode 12, and a recording layer 15 containing phase change material connected between the bottom electrode 12 and the bit line 14. In accordance with this invention, the bit line 14 |
| 7508707 |
Semiconductor storage apparatus |
March 24, 2009 |
| Disclosed is a semiconductor storage apparatus in which two sorts of memories, that is, a volatile memory and a non-volatile memory, are mounted on one chip. Data of a DRAM memory array are saved in a corresponding area of a non-volatile memory before entry to a data retention mode o |
| 7502252 |
Nonvolatile semiconductor memory device and phase change memory device |
March 10, 2009 |
| For the purpose of providing a phase change memory device advantageous in layout and operation control by obtaining sufficient write current for high integrated phase change memory devices, the nonvolatile semiconductor memory device of the invention in which word lines and bit lines |
| 7449711 |
Phase-change-type semiconductor memory device |
November 11, 2008 |
| A phase-change memory device includes a plurality of bit lines extending in a row direction, a plurality of selection lines extending in a column direction, and an array of memory cells each disposed at one of intersections between the bit lines and selection lines. Each memory cell |
| 7333363 |
Semiconductor storage apparatus |
February 19, 2008 |
| Disclosed is a semiconductor storage apparatus in which two sorts of memories, that is, a volatile memory and a non-volatile memory, are mounted on one chip. Data of a DRAM memory array are saved in a corresponding area of a non-volatile memory before entry to a data retention mode o |
| 7224016 |
Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduc |
May 29, 2007 |
| A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET |
| 7183170 |
Manufacturing method of semiconductor device |
February 27, 2007 |
| After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxida |
