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Inventor:
Araki; Satoru
Address:
Chiba, JP
No. of patents:
16
Patents:












Patent Number Title Of Patent Date Issued
6090498 Magnetoresistance effect element and magnetoresistance device July 18, 2000
In a magnetoresistance effect element, a pinning layer (antiferromagnetic layer) has a composition of Ru--Mn or Ru--M--Mn where M represents at least one selected from Rh, Pt, Pd, Au, Ag, and Re, and impurity concentrations of the pinning layer are regulated. Accordingly, there can b
6074743 Magnetoresistance effect element and magnetoresistance device June 13, 2000
A magnetoresistance effect element according to the present invention comprises magnetic multilayer film having a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic
6004654 Magnetic multilayer film, magnetoresistance element, and method for preparing magnetoresistance December 21, 1999
In a magnetoresistance multilayer film comprising at least two magnetic layers on a substrate, with a nonmagnetic layer intervening between the magnetic layers, each interface between the magnetic layer and the nonmagnetic layer is corrugated in both X and Y directions of a substrate
5968676 Magnetoresistance effect film and magnetoresistance effect type head October 19, 1999
A spin valve type magnetoresistance effect film comprises a magnetic multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer,
5958611 Magnetic multilayered film, magnetoresistance effect element and magnetoresistance device September 28, 1999
According to the present invention, a magnetic multilayered film includes an oxide antiferromagnetic layer, a pinned ferromagnetic layer which is pinned by the oxide antiferromagnetic layer, a non-magnetic metal layer and a free ferromagnetic layer which are stacked on a substrate in ord
5923504 Magnetoresistance device July 13, 1999
According to the present invention on a magnetoresistance device having a magnetoresistance effect element, since iron oxide FeO.sub.x exhibiting antiferromagnetism is used as a pinning layer, a spin-valve type magnetoresistance effect element can be obtained which is particularly ex
5874886 Magnetoresistance effect element and magnetoresistance device February 23, 1999
A magnetoresistance effect element according to the present invention comprises magnetic multilayer film having a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic
5862022 Ferromagnetic tunnel junction, magnetoresistive element and magnetic head January 19, 1999
This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an approp
5798896 Apparatus for detecting a magnetic field using a giant magnetoresistance effect multilayer and m August 25, 1998
For preventing output drop with time of a MR magnetic head or similar apparatus including a magnetic field sensor in the form of a giant magnetoresistive element of the induced ferrimagnetic or spin-valve type in which antiparallelism of magnetization is induced between the magnetic
5789069 Magnetic multilayer film and magnetoresistance element August 4, 1998
A magnetic multilayer film having magnetoresistance (MR) is prepared by depositing at least two magnetic thin films having different coercive forces while interposing a non-magnetic thin film therebetween. A first magnetic thin film having a lower coercive force has a squareness ratio
5783284 Magnetic multilayer film, magnetoresistance element, and method for preparing magnetoresistance July 21, 1998
In a magnetoresistance multilayer film comprising at least two magnetic layers on a substrate, with a nonmagnetic layer intervening between the magnetic layers, each interface between the magnetic layer and the nonmagnetic layer is corrugated in both X and Y directions of a substrate
5736236 Magnetic multilayer film and magnetoresistance element April 7, 1998
A magnetic multilayer film having magnetoresistance (MR) is prepared by depositing at least two magnetic thin films having different coercive forces while interposing a non-magnetic thin film therebetween. A first magnetic thin film having a lower coercive force has a squareness ratio
5661449 Magnetic multilayer film, method for making, and magnetoresistance device August 26, 1997
A magnetic multilayer film having magnetoresistance (MR) is prepared by alternately depositing first and second magnetic layers while interposing a non-magnetic metal layer therebetween. The number of the first magnetic layers N1 and the number of the second magnetic layers N2 having gre
5657190 Apparatus for detecting a magnetic field using a giant magnetoresistance effect multilayer August 12, 1997
For preventing output drop with time of a MR magnetic head or similar apparatus, a magnetic field sensor in the form of a giant magnetoresistive element of the induced ferrimagnetic or spin-valve type in which antiparallelism of magnetization is induced between the magnetic layers by
5514452 Magnetic multilayer film and magnetoresistance element May 7, 1996
A magnetic multilayer film having magnetoresistance (MR) is prepared by depositing at least two magnetic thin films having different coercive forces while interposing a non-magnetic thin film therebetween. A first magnetic thin film having a lower coercive force has a squareness ratio
5510172 Magnetic multilayer film and magnetoresistance element April 23, 1996
A magnetic multilayer film having magnetoresistance (MR) is prepared by depositing at least two magnetic thin films having different coercive forces while interposing a non-magnetic thin film therebetween. A first magnetic thin film having a lower coercive force has a squareness ratio










 
 
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