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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Aoyama; Masaharu
Address:
Yokohama, JP
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
4561009 Semiconductor device December 24, 1985
A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected from the group consisting of Cu
4507673 Semiconductor memory device March 26, 1985
A semiconductor memory device is disclosed which comprises:a semiconductor substrate of n conductivity type;source and drain regions of p.sup.+ conductivity type formed in the substrate;a first gate insulation film of silicon dioxide (SiO.sub.2) formed on the substrate; anda second gate insu
4433004 Semiconductor device and a method for manufacturing the same February 21, 1984
A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected from the group consisting of Cu
4403392 Method of manufacturing a semiconductor device September 13, 1983
A method for manufacturing a semiconductor device having a high breakdown voltage and a high reliability, comprises (a) forming on a semiconductor substrate an insulating layer having a diffusion window; (b) forming an impurity-doped poly-silicon layer on the insulating layer and on that
4334349 Method of producing semiconductor device June 15, 1982
Disclosed is a method of producing a semiconductor device, comprising the steps of (a) forming a first insulating layer consisting of a lower silicon oxide film and an upper slicon nitride film on the surface of a semiconductor substrate, (b) forming a second insulating layer consisting
4240096 Fluorine-doped P type silicon December 16, 1980
A semiconductor device comprising a fluorine ion implantation region which is selectively formed in a semiconductor region and further activated. The fluorine ion implantation region is adapted for use as a high resistance layer or electrical isolation layer.
4200969 Semiconductor device with multi-layered metalizations May 6, 1980
There are provided a semiconductor device having alternately layered insulating and conductive layers on the major surface of a semiconductor body and the process for manufacturing the semiconductor device. In the manufacturing process, the conductive layers other than the conductive










 
 
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