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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Aoyama; Junichi
Address:
Kanagawa, JP
No. of patents:
8
Patents:












Patent Number Title Of Patent Date Issued
7271487 Semiconductor device and method of manufacturing the same September 18, 2007
The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth
7074706 Semiconductor device and wiring forming method in semiconductor device July 11, 2006
The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal
7064441 Semiconductor device and method of manufacturing the same June 20, 2006
The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth
7012023 Semiconductor device and method of manufacturing the same March 14, 2006
The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth
6927158 Method of forming a semiconductor device with thermally conductive gas between wirings August 9, 2005
A method of forming a semiconductor device to have a gap between wirings formed on a substrate, which gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at zero degrees Celsius. In the method, the following steps are performed: (A)
6876079 Semiconductor device and method of manufacturing the same April 5, 2005
The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth
6765297 Semiconductor device and wiring forming method in semiconductor device July 20, 2004
A semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher t
6207585 Method of forming stacked insulating film and semiconductor device using the same March 27, 2001
Disclosed is a method of forming a cap insulating film at a high reliability prior to heat-treatment for removing an --OH group from a planarization insulating film (APL film) which is excellent in a gap fill ability and global planarization ability and which is formed by a liquid ph










 
 
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