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Inventor: Anderson; Timothy J.
Address: Gainesville, FL
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6906351 |
Group III-nitride growth on Si substrate using oxynitride interlayer |
June 14, 2005 |
| A layered article and method for forming the same includes a single crystal silicon substrate, a silicon oxynitride layer (SixNyOz) disposed on the silicon substrate, and a single crystal GaN layer disposed on the oxynitride layer. The silicon oxynitride layer can be formed by nitrid |
| 6596888 |
MOCVD of WNx thin films using imido precursors |
July 22, 2003 |
| Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tu |
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