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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Akiyama; Tomoyuki
Address:
Kawasaki, JP
No. of patents:
12
Patents:












Patent Number Title Of Patent Date Issued
7808698 Semiconductor device October 5, 2010
A semiconductor device including a semiconductor optical amplifier in which a photodetector is integrated without causing power loss at a low cost. The semiconductor device includes a semiconductor substrate, a semiconductor optical waveguide, at least partly capable of functioning a
7616377 Optical repeater November 10, 2009
On the upstream side of a quantum dot optical amplifier, a polarization beam splitter with one input and two outputs is provided. Two optical fibers connected to output sections of the polarization beam splitter are connected to input sections of the quantum dot optical amplifier in a
7443574 Optical transmission system October 28, 2008
An optical transmission system includes an optical nonlinear element having nonlinear input/output characteristics, a power detector detecting a power of a specific frequency component related to an optical signal reproduced by the optical nonlinear element, and a variable amplifier
7375878 Optical repeater May 20, 2008
On the upstream side of a quantum dot optical amplifier, a polarization beam splitter with one input and two outputs is provided. Two optical fibers connected to output sections of the polarization beam splitter are connected to input sections of the quantum dot optical amplifier in a
7288783 Optical semiconductor device and method for fabricating the same October 30, 2007
Quantum dots are formed on a plurality of surfaces whose normal direction are different from each other. The quantum dots are formed on the surfaces normal to each other, whereby the polarization dependency can be eliminated as described above. Thus, the optical semiconductor device can
7280272 Bias control of SOA via switches October 9, 2007
A semiconductor device, comprising a semiconductor stacking body configured so as to sandwich an active layer by a p-type semiconductor layer and an n-type semiconductor layer and having plural regions along the active layer, plural electrodes provided on the p-type semiconductor lay
7167301 Semiconductor optical amplifier suitable for coarse WDM communications and light amplification m January 23, 2007
An active layer contains quantum structures. The active layer amplifies light propagating therein while current is injected therein. Electrodes are provided for sections of the active layer sectionalized along a light propagation direction. The electrodes inject different currents into t
7123838 Optical time-division multiplex signal processing apparatus and method, optical time-division mu October 17, 2006
An optical time-division multiplex signal processing apparatus includes an optical dispersion part providing optical dispersion to an optical time-division multiplex signal and an optical clock signal, an optical detector coupled optically to the optical dispersion part for detecting a
7081983 Wavelength conversion device July 25, 2006
A wavelength conversion device including a nonlinear medium having quantum dots uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing by employing a control ap
6992320 Semiconductor optical device with quantum dots having internal tensile or compressive strain January 31, 2006
A semiconductor optical device having a substrate having a surface of a first semiconductor having a first lattice constant; and a semiconductor lamination layer formed on the substrate, the semiconductor lamination layer having an active layer which contains quantum dots of a first kind
6925229 Wavelength controllable optical device and light control method August 2, 2005
A first optical waveguide for guiding light is formed on a substrate. A surface acoustic wave transducer for generating a surface acoustic wave which propagates along a direction in which the first optical wave guide guides the light at least partial region of the first optical waveguide
6639240 Photosemiconductor device and method for fabricating the same October 28, 2003
A photosemiconductor device comprises a plurality fo quantum dots 22, and the plural quantum dots 22 have disuniform sizes. Quantum dots of disuniform sizes are formed by a low area ratio, whereby the photosemiconductor device can have a wide gain band.










 
 
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