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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Akiyama; Kazutaka
Address:
Matsudo, JP
No. of patents:
11
Patents:












Patent Number Title Of Patent Date Issued
8580652 Semiconductor device and manufacturing method thereof November 12, 2013
According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the f
8008779 Semiconductor device and semiconductor device manufacturing method August 30, 2011
Disclosed is a semiconductor device that includes: a semiconductor substrate; a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less; a conductor which covers a side face of the first insulating film at least near fou
7943459 Semiconductor device and method of manufacturing the semiconductor device May 17, 2011
A semiconductor device is provided with a conductor wire and a fuse wire formed in an insulating film over a semiconductor substrate, a first under-pad-wire insulating film formed above the insulating film, a second under-pad-wire insulating film formed on the first under-pad-wire in
7919835 Semiconductor device and method for manufacturing the same April 5, 2011
The present invention provides a semiconductor device having a low-k film including an interconnect layer and a highly-reliable through-substrate contact plug. The semiconductor device includes: a semiconductor substrate having a first surface and a second surface facing each other;
7831330 Process control system, process control method, and method of manufacturing electronic apparatus November 9, 2010
A process control system includes a client computer which prepares a correlation between a reference monitored value of apparatus information and a feature quantity, a manufacturing execution system which prepares a processing recipe describing, as a first setting value in an actual
7701004 Semiconductor device and method of manufacturing thereof April 20, 2010
A first conductive layer and a second conductive layer are formed on an upper surface of a semiconductor substrate. The second conductive layer formed at a higher location than the first conductive layer. An insulating film is formed over the semiconductor substrate to cover the firs
7611994 Fine patterning method for semiconductor device November 3, 2009
An insulation film is formed on a semiconductor substrate. A stopper film, which has a large etching selectivity relative to the insulation film and has a first film thickness, is formed on the insulation film. A first mask material, which has a second film thickness that is less than th
7596421 Process control system, process control method, and method of manufacturing electronic apparatus September 29, 2009
A process control system includes a client computer which prepares a correlation between a reference monitored value of apparatus information and a feature quantity, a manufacturing execution system which prepares a processing recipe describing, as a first setting value in an actual
7348623 Semiconductor device including a MIM capacitor March 25, 2008
A semiconductor device includes: a semiconductor substrate; a first wiring formed above the semiconductor substrate with a first insulating film interposed therebetween; an MIM capacitor formed above the first insulating film; a second insulating film formed to cover the MIM capacito
6909188 Semiconductor device and manufacturing method thereof June 21, 2005
There is disclosed a semiconductor device comprising a first wire and a pad portion thereof provided in a portion from an upper surface to an inner portion of a first insulation film provided above a substrate, a second insulation film provided on the first insulation film and the first
6888220 Semiconductor device having a buried wiring lead structure May 3, 2005
A semiconductor device includes a semiconductor substrate, an insulative film formed above the semiconductor substrate, the film having a first groove and a second groove greater in width than the first groove, a wiring lead buried in the first groove of the insulative film to have a










 
 
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