| Patent Number |
Title Of Patent |
Date Issued |
| 5285080 |
Method of selective light detection |
February 8, 1994 |
| A method of selective light detection uses an optical multi-stable device selectively exhibiting a variety of optical multi-stable characteristics for incident light wavelengths or intensities. The device includes an optically serial connection of two optical bistable elements. Each of t |
| 5274660 |
Semiconductor device and method of making it |
December 28, 1993 |
| A semiconductor laser includes an active layer and a cladding layer disposed on the active layer and made of a semiconductor material having a larger energy band than the material of the active layer. A diffraction grating layer is disposed within the cladding layer close to the active |
| 5036372 |
Heterojunction avalanche transistor |
July 30, 1991 |
| An avalanche transistor has a heterojunction emitter-base junction. The avalanche transistor includes a spacer layer provided between an emitter layer and a base layer. The spacer layer has an energy band gap between that of the base layer and that of the emitter layer, a carrier con |
| 5020072 |
Semiconductor laser device |
May 28, 1991 |
| A semiconductor laser device includes an active layer, a first semiconductor layer having a larger energy band gap than the active layer, a diffraction grating layer having a larger energy band gap than the active layer and a smaller energy band gap than the first semiconductor layer |
