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Abe; Yuji
Amagasaki, JP
No. of patents:

Patent Number Title Of Patent Date Issued
5285080 Method of selective light detection February 8, 1994
A method of selective light detection uses an optical multi-stable device selectively exhibiting a variety of optical multi-stable characteristics for incident light wavelengths or intensities. The device includes an optically serial connection of two optical bistable elements. Each of t
5274660 Semiconductor device and method of making it December 28, 1993
A semiconductor laser includes an active layer and a cladding layer disposed on the active layer and made of a semiconductor material having a larger energy band than the material of the active layer. A diffraction grating layer is disposed within the cladding layer close to the active
5036372 Heterojunction avalanche transistor July 30, 1991
An avalanche transistor has a heterojunction emitter-base junction. The avalanche transistor includes a spacer layer provided between an emitter layer and a base layer. The spacer layer has an energy band gap between that of the base layer and that of the emitter layer, a carrier con
5020072 Semiconductor laser device May 28, 1991
A semiconductor laser device includes an active layer, a first semiconductor layer having a larger energy band gap than the active layer, a diffraction grating layer having a larger energy band gap than the active layer and a smaller energy band gap than the first semiconductor layer

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