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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Abe; Takashi
Address:
Kanagawa, JP
No. of patents:
11
Patents:




Patent Number Title Of Patent Date Issued
7623172 Solid-state image pickup device and drive method thereof November 24, 2009
A solid state imaging device having an X-Y addressable solid state imaging device with color filters and a driving unit which reads out pixel information of a same color filter in a unit pixel block as pixel information for one pixel simulatively. A predetermined color coding for the
7595828 Solid-state image pickup device and driving method therefor September 29, 2009
In a MOS solid-state image pickup device including two capacitors storing electric charges of pixels in two rows for each column and two charge-voltage conversion amplifiers for outputting pixel signals corresponding to the electric charges stored in the capacitors, a switch for sele
7582503 Solid state image pickup device and method of producing solid state image pickup device September 1, 2009
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration ma
7515185 Solid-state imaging device April 7, 2009
A solid-state imaging device for enlarging an operating margin of a pixel portion and achieving complete transfer of a signal charge by using a plurality of power supply voltages, wherein a plurality of power supplies having different power supply voltage values are supplied to portions
7499091 Solid-state imaging device and method for driving same March 3, 2009
A solid-state imaging device for preventing aging deterioration of image quality due to a thinning out reading mode in addition to a usual all pixel reading operation mode and maintaining a good image quality and a method for driving the same, including an imaging pixel portion 111 f
7485903 Solid-state imaging device February 3, 2009
A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which
7404557 Sheet transporting apparatus and sheet processing apparatus using the same July 29, 2008
A sheet transporting apparatus, includes: a sheet transportation path; a predetermined number of transport members disposed in a sheet transportation path; a side position regulating mechanism which regulates a position of a side edge of a sheet in the sheet transportation path, the
7279712 Solid state image pickup device and method of producing solid state image pickup device October 9, 2007
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration ma
7268812 Solid-state image pickup device and pixel defect testing method thereof September 11, 2007
A solid-state image pickup device and a pixel defect testing method thereof are disclosed. A solid-state image pickup device including: a pixel unit having a plurality of unit pixels that perform photoelectric conversion; a driving circuit for driving the pixel unit to control output
7054022 Image forming apparatus management system May 30, 2006
An image forming apparatus management system for setting various parameters of the image forming apparatus according to a job instruction from the client machine 2 comprises a host server 4 equipped with an external database 5 for storing various parameters of the image forming appar
6821809 Solid state image pickup device and method of producing solid state image pickup device November 23, 2004
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark.


 
 
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