There are provided a method for manufacturing a mirror polished wafer with little polishing sag (peripheral sag) by a relatively easy method, a method for manufacturing a bonded wafer having an SOI layer or a bond layer which has no periphery removing region or reduces it, and a bonded
There is disclosed a heat treatment method for a silicon monocrystal wafer comprising the steps of heat-treating in a reducing atmosphere a silicon monocrystal wafer manufactured by growing a silicon monocrystal ingot by Czochralski method wherein a wafer obtained from a silicon monocrys
There is disclosed a heat treatment method for a silicon wafer in which the silicon wafer is heat treated in a reducing atmosphere through use of a rapid heating/rapid cooling apparatus. The silicon wafer is heat treated for a period of 1 to 60 seconds at a temperature in the range of
