| Patent Number |
Title Of Patent |
Date Issued |
| 6899758 |
Method and apparatus for growing single crystal |
May 31, 2005 |
| The present invention provides a method and apparatus for growing a single crystal by the Czochralski method, wherein a single crystal is grown with forced cooling of neighborhood of a crystal growth interface by disposing a cooling cylinder formed of copper or a metal having a heat cond |
| 6830740 |
Method for producing solar cell and solar cell |
December 14, 2004 |
| The present invention provides a method for producing a solar cell comprising forming the solar cell from a CZ silicon single crystal wafer, wherein a CZ silicon single crystal wafer having an initial interstitial oxygen concentration of 15 ppma or less is used as the CZ silicon single |
| 5427052 |
Method and apparatus for production of extremely thin SOI film substrate |
June 27, 1995 |
| A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly ac |
| 5376215 |
Apparatus for production of extremely thin SOI film substrate |
December 27, 1994 |
| A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly ac |
| 5223080 |
Method for controlling thickness of single crystal thin-film layer in SOI substrate |
June 29, 1993 |
| A method for controlling the thickness of a single crystal thin-film silicon layer bonded on a dielectric substrate in a SOI substrate thereby effecting conversion of said single crystal silicon layer to a thin film is disclosed. To be more precise, said method comprises selectively and |
| 4956153 |
Apparatus for Czochralski single crystal growing |
September 11, 1990 |
| An improved apparatus for growing a single crystal of semiconductor silicon by the Czochralski method which apparatus has a heat-resistant and heat-insulating covering board in direct contact with the upper ends of heat-insulating members surrounding a quartz glass silicon melting cr |
