| Patent Number |
Title Of Patent |
Date Issued |
| 7294779 |
Solar cell and method for producing the same |
November 13, 2007 |
| A solar cell 1 has a number of grooves 2 formed in parallel with each other on a first main surface 24a of a silicon single crystal substrate. An electrode 6 is formed on the inner side face of each groove 2 on one side. Each groove 2 is formed in the direction in disagreement with the |
| 6963024 |
Solar cell module and its installing module |
November 8, 2005 |
| A solar cell module 60 has a plurality of solar cells 14 having a plurality of parallel grooves 8 on the individual light-receiving surfaces thereof, each of the grooves having an electrode 5 for extracting output on the inner side face (electrode-forming inner side face) on one side in |
| 6815645 |
Heat reflecting material and heating device using the material |
November 9, 2004 |
| A heating apparatus 20 comprises a container 2 having a work housing space 1 formed therein, and a heat source 3 for heating a work W in the work housing space 1. The apparatus further comprises a heat ray reflecting member 10 having a heat reflecting surface 10a thereof composed of a he |
| 6815605 |
Silicon single crystal and wafer doped with gallium and method for producing them |
November 9, 2004 |
| There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a resistivity is 5.OMEGA..cm to 0.1.OMEGA..cm and a method for producing a silicon single crystal to |
| 6770507 |
Semiconductor wafer and method for producing the same |
August 3, 2004 |
| There is provided a novel bonded semiconductor wafer having a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more and manufactured by means of a bonding process, wherein at least one of the insulator layers is formed with ion imp |
| 6544656 |
Production method for silicon wafer and silicon wafer |
April 8, 2003 |
| A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 .OMEGA..multidot.cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and sub |
| 6538285 |
Silicon wafer |
March 25, 2003 |
| The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through use of a rapid heating/rapid |
| 6498288 |
Silicon germanium crystal |
December 24, 2002 |
| Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5.times.10.sup.-5 mm.sup. |
| 6380551 |
Optical function device with photonic band gap and/or filtering characteristics |
April 30, 2002 |
| A stacked material free from a degraded quality of crystal, formed with a precise periodicity, and fabricated without relying on the vapor phase growth method is provided. An optical function device using the stacked material is also provided. A starting stacked material composed of two |
| 6333279 |
Method for producing silicon wafer and silicon wafer |
December 25, 2001 |
| The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through use of a rapid heating/rapid |
| 6204188 |
Heat treatment method for a silicon wafer and a silicon wafer heat-treated by the method |
March 20, 2001 |
| There is disclosed a heat treatment method for a silicon wafer. A silicon wafer, on which a natural oxide film is formed at least at the surface thereof, is loaded directly into a heat treatment furnace heated to a temperature within a temperature range of 1000.degree. C. to the melting |
| 5911822 |
Method of manufacturing silicon monocrystal, and seed crystal used in the method |
June 15, 1999 |
| In a method of manufacturing a silicon monocrystal using the Czochralski method, there is used a seed crystal whose tip end has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is the |
| 5485021 |
Semiconductor device with optical waveguides to achieve signal transmission using optical means |
January 16, 1996 |
| A semiconductor device 30 is configured with a transparent insulator substrate 31 in which an optical waveguide(s) 37 is formed, a semiconductor thin film 32 is pasted on the transparent insulator substrate 31, an integrated circuit(s) 33 is formed on the semiconductor thin film 32, |
| 5395788 |
Method of producing semiconductor substrate |
March 7, 1995 |
| The present invention provides a method of making a semiconductor substrate having an SOI structure by temporarily bonding together two wafers having different thermal expansion coefficients to allow thinning of at least one of the wafers by chemical and/or mechanical treatment(s) to red |
| 5321264 |
Method for evaluating surface state of silicon wafer |
June 14, 1994 |
| A method for evaluating the surface state of a silicon wafer is here disclosed which comprises the steps of directly bringing an internal reflection element having a larger refractive index than that of silicon into close contact with the surface of the silicon wafer, selecting a lig |
| 5266824 |
SOI semiconductor substrate |
November 30, 1993 |
| The present invention provides a semiconductor substrate which is formed by bonding wafers together by heat treatment without causing the substrate to be thermally damaged to have thermal strain, separation, cracks, etc. due to the difference in the thermal expansion coefficient of the w |
| 5240883 |
Method of fabricating SOI substrate with uniform thin silicon film |
August 31, 1993 |
| A thin Silicon film On Insulator (SOI) material fabricating method which is capable of providing a very high thickness uniformity of the silicon film, a process simplification and a considerable reduction of processing cost is disclosed, in which a silicon oxide film is formed on one or |
| 5213657 |
Method for making uniform the thickness of a Si single crystal thin film |
May 25, 1993 |
| A Si single crystal thin film is classified according to the thickness into several areas such that the areas where the thin film is thicker is made oxide layer-free and the areas where the thin film is thinner is covered with oxide layer. Then, oxidation is conducted so that the thicker |
| 5110404 |
Method for heat processing of silicon |
May 5, 1992 |
| In a method for heat process of silicon, a single crystal silicon produced by the Czochralski process is thermally processed at a low temperature ranging from 400.degree. C. to 550.degree. C. Outside this temperature range, the oxygen precipitate is not adequate. The result is that a |
| 5007071 |
Method of inspecting bonded wafers |
April 9, 1991 |
| A method of inspecting bonded wafers, which involves obtaining a Lang topograph of bonded wafers as a sample by using a Lang camera, or further treating an image thereon, thereby detecting unbonded regions at the interface of the bonded wafers. In bonding two silicon wafers to each o |
| 4833287 |
Single-turn induction heating coil for floating-zone melting process |
May 23, 1989 |
| This invention relates to a single-turn induction heating coil used for floating-zone melting process. According to this invention, both ends of a single-turn coil are crossed each other in a peripheral direction of the coil so as to form an overlap section, and a pair of power supply po |
