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Inventor: Abe; Ryoji
Address: Sagamihara, JP
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| RE31652 |
Method of producing a semiconductor device |
August 28, 1984 |
| In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermally-oxid |
| 4343080 |
Method of producing a semiconductor device |
August 10, 1982 |
| In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermally-oxid |
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