| |
|
Inventor: Abe; Ryoji
Address: Fuchu, JP
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 4305974 |
Method of manufacturing a semiconductor device |
December 15, 1981 |
| A semiconductor device with multilayer wirings can be produced with high yield by applying a liquid source for silicate film to a surface of a chemically vapor deposited insulating layer placed on a surface of the semiconductor substrate in order to provide a smoothed surface. After |
|
|
|
