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Inventor: Abe; Osamu
Address: Yokohama, JA
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 3997907 |
Light emitting gallium phosphide device |
December 14, 1976 |
| A light emitting gallium phosphide device comprising a gallium phosphide (GaP) substrate of one conductivity type and at least one GaP layer of the opposite conductivity type formed on said substrate so as to form a P-N junction, wherein, the GaP layer, when impressed with forward voltag |
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