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Inventor: Abe; Misuzu
Address: Kanagawa, JP
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7003008 |
Semiconductor laser light emitting device |
February 21, 2006 |
| Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed |
| 6865203 |
Semiconductor laser light emitting device |
March 8, 2005 |
| Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed int |
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