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Inventor: Abe; Masahito
Address: Tokyo, JP
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6488774 |
Trap apparatus |
December 3, 2002 |
| A trap apparatus is optimum for trapping a material gas discharged from a vapor deposition apparatus for depositing in a vapor phase thin films of high-dielectric or ferroelectric such as barium/strontium titanates on substrates. The trap apparatus is disposed downstream of a vacuum proc |
| 6387182 |
Apparatus and method for processing substrate |
May 14, 2002 |
| A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the |
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