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Inventor: Abe; Kichio
Address: Yokohama, JP
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 4110840 |
Sense line charging system for random access memory |
August 29, 1978 |
| A random access memory includes a column of static MOS storage cells. Two sense-write conductors are coupled to each cell in the column. Each sense-write conductor is also coupled, respectively, to a termination MOSFET. The first sense-write conductor of each column of storage cells is |
| 4099265 |
Sense line balance circuit for static random access memory |
July 4, 1978 |
| A random access memory includes a column of static MOS storage cells. Two sense-write write conductors are coupled to each cell in the column. The first sense-write conductor of each column of storage cells is coupled by means of a first coupling MOSFET to a first bit-sense conductor. Th |
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