| Patent Number |
Title Of Patent |
Date Issued |
| 7619470 |
Power amplifier |
November 17, 2009 |
| A power amplifier includes: a plurality of field effect transistors connected in parallel and each having a first and second ends, the first end being connected to ground; an amplifying unit which includes at least one of an inductor, a capacitor and a band pass filter and has a third |
| 7508268 |
Power amplifier and transmission and reception system |
March 24, 2009 |
| A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a |
| 7490390 |
Method of manufacturing a voltage controlled oscillator |
February 17, 2009 |
| A manufacturing method is provided for a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positi |
| 7471031 |
Piezoelectric MEMS element and tunable filter equipped with the piezoelectric MEMS element |
December 30, 2008 |
| In a MEMS type variable capacity having a piezoelectric driving mechanism, a movable head having movable electrodes are arranged thereon, stationary electrodes is positioned to face the movable electrodes, and a piezoelectric driving beam structure is joined to the movable head and h |
| 7463117 |
Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturi |
December 9, 2008 |
| A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provi |
| 7420320 |
Piezoelectric thin film device and method for manufacturing the same |
September 2, 2008 |
| A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal. |
| 7323805 |
Piezoelectric thin film device and method for manufacturing the same |
January 29, 2008 |
| A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal. |
| 7221920 |
Voltage controlled oscillator, frequency synthesizer and communication apparatus |
May 22, 2007 |
| A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a |
| 7215066 |
Piezoelectric actuator and micro-electromechanical device |
May 8, 2007 |
| A piezoelectric actuator includes a first beam including a first bottom electrode, a first piezoelectric film on the first bottom electrode, and a first top electrode on the first piezoelectric film, a fixed end assigned at an end of the first beam and fixed on a substrate, a connect |
| 7211933 |
Voltage controlled oscillator |
May 1, 2007 |
| The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face |
| 6747529 |
Piezoelectric thin film resonator and frequency variable resonator using the resonator |
June 8, 2004 |
| A piezoelectric thin film resonator which comprises a first electrode, a second electrode, and a piezoelectric film which is interposed between the first electrode and the second electrode, and formed of an epitaxial ferroelectric thin film containing barium titanate, a spontaneous p |
| 6533906 |
Method of manufacturing an oxide epitaxially strained lattice film |
March 18, 2003 |
| A method of manufacturing an epitaxially-strained lattice film of an oxide, in which epitaxially-strained lattices having a good crystalline property are formed by applying RF power to a substrate holder and irradiating positive ions having a moderate energy while preventing damage to th |
| 6198652 |
Non-volatile semiconductor integrated memory device |
March 6, 2001 |
| A semiconductor integrated memory device comprises a plurality of memory cell blocks, which are formed in the form of a matrix and each of which comprises: a memory cell chain including a plurality of units, each comprising a ferroelectric memory capacitor and a control transistor co |
| 6060735 |
Thin film dielectric device |
May 9, 2000 |
| A thin film dielectric device is disclosed, that comprises a substrate, a lower electrode formed on the substrate and composed of a laminate film having columnar grains that have grown in a vertical to a surface of the substrate, a dielectric thin film formed on the lower electrode and |
| 5952687 |
Semiconductor memory device having a trench capacitor with lower electrode inside the trench |
September 14, 1999 |
| A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge sto |
| 5929473 |
MMIC semiconductor device with WN.sub.x capacitor electrode |
July 27, 1999 |
| An SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from |
| 5909389 |
Semiconductor memory device using ferroelectric capacitor |
June 1, 1999 |
| A semiconductor memory device has a plurality of memory cells arranged in a matrix format. Each memory cell includes a thin film capacitor with a ferroelectric film and a pair of electrodes opposing each other through the ferroelectric film, and a transfer gate MOS transistor arranged to |
| 5889696 |
Thin-film capacitor device and RAM device using ferroelectric film |
March 30, 1999 |
| A semiconductor memory device is constituted by arranging a plurality of memory cells in a matrix format, each of which includes a thin-film capacitor having a ferroelectric film and a pair of electrodes facing each other via the ferroelectric film, and a transfer gate transistor connect |
| 5889299 |
Thin film capacitor |
March 30, 1999 |
| A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite struc |
| 5796648 |
Nonvolatile semiconductor memory device and method for manufacturing same |
August 18, 1998 |
| A nonvolatile semiconductor memory device has a ferroelectric cell and a paraelectric cell. The ferroelectric cell includes a first thin-film capacitor which has a first lower electrode formed on a substrate, a first dielectric film grown on the first lower electrode and a first upper |
| 5739563 |
Ferroelectric type semiconductor device having a barium titanate type dielectric film and method |
April 14, 1998 |
| A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a |
| 5691219 |
Method of manufacturing a semiconductor memory device |
November 25, 1997 |
| A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge sto |
| 5670808 |
Metal oxide capacitor with a WN.sub.X electrode |
September 23, 1997 |
| A semiconductor device in which an SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, an |
| 5400275 |
Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier se |
March 21, 1995 |
| A semiconductor memory device comprises a plurality of memory cells arranged in the form of a matrix to constitute rows-and columns, a plurality of first driving lines, connected to the memory cells, for transmitting a first driving signal to the memory cells, one of the plurality of |
| 5297077 |
Memory having ferroelectric capacitors polarized in nonvolatile mode |
March 22, 1994 |
| A semiconductor memory device comprises a ferroelectric capacitor, a voltage output circuit for outputting a first voltage for reversely polarizing the ferroelectric capacitor and a second voltage by which the polarization of the ferroelectric capacitor is not reversed, regardless of |
| 5155573 |
Ferroelectric capacitor and a semiconductor device having the same |
October 13, 1992 |
| A ferroelectric capacitor includes a ferroelectric layer consisting of lead zirconate titanate formed on a silicon substrate, a plurality of rectangular trenches formed in the direction of thickness of the ferroelectric layer with a ferroelectric material therebetween, and first and |
