| Patent Number |
Title Of Patent |
Date Issued |
| 7459833 |
Thin film piezoelectric actuator |
December 2, 2008 |
| A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided |
| 7459827 |
Piezoelectric-driven MEMS device and method for manufacturing the same |
December 2, 2008 |
| A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the reces |
| 7135940 |
Tunable filter and portable telephone |
November 14, 2006 |
| A tunable filter has a plurality of variable capacitors and a plurality of inductor elements, each being formed on a common substrate, a filter circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a monito |
| 6870446 |
High frequency filter |
March 22, 2005 |
| A high frequency filter comprises thin film piezoelectric resonators connected in series between the input/output nodes, thin film piezoelectric resonators connected in parallel between the input/output nodes and a variable voltage circuit adapted to change the voltage applied to at |
| 6809604 |
Voltage control oscillator having a ferroelectric thin film perovskite single crystal resonator |
October 26, 2004 |
| To provide a miniaturized voltage controlled oscillator which can oscillate simultaneously a plurality of frequencies and has high stability of frequency, an excellent low phase noise, small variation per hour, and a wide frequency variable range.A thin film bulk acoustic wave resonator |
| 6797957 |
Infrared detection element and infrared detector |
September 28, 2004 |
| An infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 .mu.m having a principal surface, a first electrode layer 4 formed on the principal surface of the single-crystalline base layer 3, a ferroelectric layer 5 which is formed on the fi |
| 5760432 |
Thin film strained layer ferroelectric capacitors |
June 2, 1998 |
| A capacitor having a first electrode and a dielectric material epitaxially deposited on a surface of the electrode to form a dielectric layer on the electrode. The dielectric material forming the dielectric layer has induced strain in the layer sufficient to significantly improve the |
