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Inventor: Abe; Katura
Address: Higashimurayama, JP
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6707139 |
Semiconductor device with plural unit regions in which one or more MOSFETs are formed |
March 16, 2004 |
| A plurality of unit areas having one to a plurality of MOSFETs for implementing specific logic circuits are placed in a first direction. A first interconnection extending in the first direction is formed over each unit area. A second interconnection extending in the first direction is |
| 6274895 |
Semiconductor integrated circuit device |
August 14, 2001 |
| A plurality of unit areas having one to a plurality of MOSFETs for implementing specific logic circuits are placed in a first direction. A first interconnection extending in the first direction is formed over each unit area. A second interconnection extending in the first direction is |
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