| Patent Number |
Title Of Patent |
Date Issued |
| 5651867 |
Plasma processing method and apparatus |
July 29, 1997 |
| A plasma processing apparatus comprising: a vacuum container; an evacuation means for keeping the interior of the vacuum container at a pressure not higher than atmospheric pressure; a substrate support device for supporting a substrate to be subjected to plasma processing; an electrode |
| 4950548 |
Magnetic recording medium and method of producing same |
August 21, 1990 |
| The present invention relates to a magnetic recording medium for a magnetic disk unit or the like and, more particularly, to a magnetic recording medium having its recording layer made of a magnetic alloy film with uniform magnetic characteristics. The present magnetic recording medium |
| 4610774 |
Target for sputtering |
September 9, 1986 |
| A sputtering target structure suitable for use with a planar magnetron sputtering electrode device has a plurality of annular target members arranged concentrically. The annular target member is provided with either an annular groove for concentration of an electric field or an annular |
| 4606802 |
Planar magnetron sputtering with modified field configuration |
August 19, 1986 |
| Planar magnetron sputtering sputters a target formed of plural target members from their principal surface. The plural target members are arranged on an electrode. The sputtering is carried out in such a condition that an electric field and magnetic field are substantially parallel i |
| 4517444 |
Thermal printhead |
May 14, 1985 |
| Disclosed is a thermal printhead made of an insulating substrate, and a heat generating resistor layer formed on the substrate, and wherein the heat generating resistor layer is supplied with electric current. The heat generating resistor layer is made of Cr-Si-SiO alloy, and with the Cr |
| 4460494 |
Resistor |
July 17, 1984 |
| Disclosed is a resistor made of an alloy consisting essentially of Cr, Si and SiO. |
| 4444635 |
Film forming method |
April 24, 1984 |
| A film forming method by plasma sputtering is provided to attain a composite film on a substrate. A target plate having metal materials in a different pattern is prepared in opposition to the substrate. A plasma is created by a planar magnetron sputtering electrode structure. The plasma |
| 4430387 |
Base plate for magnetic recording disc |
February 7, 1984 |
| A base plate for magnetic recording disc is produced by coating thin metal layers containing no impurities for forming defects by an anodizing treatment on one or both sides of a discoid substrate made of a metal such as aluminum or an aluminum alloy or from a plastic by a dry process, a |
| 4405435 |
Apparatus for performing continuous treatment in vacuum |
September 20, 1983 |
| An apparatus for performing continuous treatment in vacuum including an inlet chamber, a first intermediate chamber, at least one vacuum treating chamber, a second intermediate chamber and a withdrawing chamber arranged in the indicated order in a direction in which base plates are s |
| 4401539 |
Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux gen |
August 30, 1983 |
| A sputtering apparatus of the planar magnetron type is disclosed, in which a low-pressure gas is ionized by glow discharge, ions in the plasma are accelerated by a voltage applied between a cathode and an anode to bombard a target structure, atoms or particles of a target material sputte |
| 4308571 |
Low temperature-sinterable dielectric composition and thick film capacitor using the same |
December 29, 1981 |
| A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A. |
