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Inventor: Abe; Haruhiko
Address: Takarazuka, JP
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 4377734 |
Method for forming patterns by plasma etching |
March 22, 1983 |
| Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which |
| 4341616 |
Dry etching device |
July 27, 1982 |
| A dry etching device is provided in which on at least one portion of the path of etchant movement from the plasma production region to the etching workpiece a resin coating containing atoms or molecules of the same type as the chemically active atoms or molecules which constitute the etc |
| 4333226 |
Method of forming patterned refractory metal films by selective oxygen implant and sublimation |
June 8, 1982 |
| A thin film of a metal which is capable of oxidation and sublimation is formed on a major surface of a semiconductor substrate, and a portion of a major surface of the thin metallic film is irradiated with an oxygen ion beam to convert a portion of the thin metallic film to an oxide, and |
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