| Patent Number |
Title Of Patent |
Date Issued |
| 4062040 |
Field effect transistor structure and method for making same |
December 6, 1977 |
| An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive, silic |
| 4051273 |
Field effect transistor structure and method of making same |
September 27, 1977 |
| An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive silico |
| 4044452 |
Process for making field effect and bipolar transistors on the same semiconductor chip |
August 30, 1977 |
| A process and the resulting structure for making metal oxide silicon field effect transistors and vertical bipolar transistors on the same semiconductor chip with the devices being dielectrically isolated from each other. The process does not require an epitaxial layer. The bipolar d |
| 4010482 |
Non-volatile Schottky barrier diode memory cell |
March 1, 1977 |
| A non-volatile memory cell that includes a Schottky barrier diode, located over a sub-diffused line or region formed within the substrate, acting as the control element. Information is stored in the device by introducing electrons into a nitride-oxide interface located at the perimeter o |
