| Patent Number |
Title Of Patent |
Date Issued |
| 7312474 |
Group III nitride based superlattice structures |
December 25, 2007 |
| A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier lay |
| 6958497 |
Group III nitride based light emitting diode structures with a quantum well and superlattice, gr |
October 25, 2005 |
| A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier lay |
| 6734033 |
Ultraviolet light emitting diode |
May 11, 2004 |
| A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of rep |
| 6664560 |
Ultraviolet light emitting diode |
December 16, 2003 |
| A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of rep |
