Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of preparing a compound semiconductor crystal










Image Number 2 for United States Patent #RE42279.

A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1.times.10.sup.15cm.sup.-3 to 20.times.10.sup.15cm.sup.-3 is prepared with high reproducibility.








 
 
  Recently Added Patents
Mass spectrometry device and method using ion-molecule reaction ionization
Biomarkers of gastric cancer and use thereof
Power supply input voltage detection circuit
Radio transmitter and radio receiver with channel condition assessment
Utilizing virtually stored media snapshots for rasterizing print jobs
Coreference resolution in an ambiguity-sensitive natural language processing system
Method and apparatus for controlled reoxygenation
  Randomly Featured Patents
Waveform synthesizer arrangement
Clock
Candy box
Method and apparatus for performing soft handoff between cells of large differing radii
Rocking toy
Preparation of 3(5)-methylpyrazoles
Folding box grater
Mobile communication method and exchange station
Card connector that can prevent both leaping-out and ejection failure of a card
Front cover of automotive engine