Resources Contact Us Home
Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process

Image Number 3 for United States Patent #8486786.

When forming sophisticated gate electrode structures of transistor elements of different type, the threshold adjusting channel semiconductor alloy may be provided prior to forming isolation structures, thereby achieving superior uniformity of the threshold adjusting material. Consequently, threshold variability on a local and global scale of P-channel transistors may be significantly reduced.

  Recently Added Patents
Display panel and gate driving circuit and driving method for gate driving circuit
Aperture stop
Multiplexing channels by a medium access controller
System and method for advertising messages on distributed document processing devices
Metal colloidal particles, metal colloid and use of metal colloid
Area reduction for surface mount package chips
  Randomly Featured Patents
High switching speed, coaxial switch for R.F. signals
Coating and developing system and coating and developing method
Feed arrangement for and method of continuously feeding cigars wrappers to cigar wrapping stations of cigar wrapping machines
Aerial recliner for parasailing
Shoe case
Packaging box
Wearable air bag device
Vacuum pencil
Chemical process
Torque multiplier wrench set