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Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process

Image Number 3 for United States Patent #8486786.

When forming sophisticated gate electrode structures of transistor elements of different type, the threshold adjusting channel semiconductor alloy may be provided prior to forming isolation structures, thereby achieving superior uniformity of the threshold adjusting material. Consequently, threshold variability on a local and global scale of P-channel transistors may be significantly reduced.

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