Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of removing high-K dielectric layer on sidewalls of gate structure










Image Number 3 for United States Patent #8481389.

A semiconductor structure, and method of forming a semiconductor structure, that includes a gate structure on a semiconductor substrate, in which the gate structure includes a gate conductor and a high-k gate dielectric layer. The high-k gate dielectric layer is in contact with the base of the gate conductor and is present on the sidewalls of the gate conductor for a dimension that is less than 1/4 the gate structure's height. The semiconductor structure also includes source regions and drain regions present in the semiconductor substrate on opposing sides of the gate structure.








 
 
  Recently Added Patents
System and method for providing dynamic navigation through a property to a selected destination
Stevia formulation
Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor
Image forming apparatus and method
Optical power measurement method, optical line terminal and optical network unit
Information processing apparatus, information outputting method and computer program storage device
System and method for monitoring network activity
  Randomly Featured Patents
Miniature, multiple layer, side mounting high frequency blocking capacitor
Application of precious metal to spark plug electrode
Three-part folding roof for convertible vehicles
Locking frustrum nut
Ferromagnetic metal powder and magnetic recording medium using the same
Gas turbine engine gas flow ducts
Self-service machine operated by communications terminal, and service providing method thereof
Gas turbine engine thermal management system
Endorepellin: methods and compositions for inhibiting angiogenesis
Process for treating waste water containing a resin