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Method of removing high-K dielectric layer on sidewalls of gate structure

Image Number 3 for United States Patent #8481389.

A semiconductor structure, and method of forming a semiconductor structure, that includes a gate structure on a semiconductor substrate, in which the gate structure includes a gate conductor and a high-k gate dielectric layer. The high-k gate dielectric layer is in contact with the base of the gate conductor and is present on the sidewalls of the gate conductor for a dimension that is less than 1/4 the gate structure's height. The semiconductor structure also includes source regions and drain regions present in the semiconductor substrate on opposing sides of the gate structure.

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