Resources Contact Us Home
Silicon-germanium, quantum-well, light-emitting diode

Image Number 5 for United States Patent #8476647.

A silicon-germanium, quantum-well, light-emitting diode. The light-emitting diode includes a p-doped portion, a quantum-well portion, and an p-doped portion. The quantum-well portion is disposed between the p-doped portion and the n-doped portion. The quantum-well portion includes a carrier confinement region that is configured to facilitate luminescence with emission of light produced by direct recombination with a hole confined within the carrier confinement region. The p-doped portion includes a first alloy of silicon-germanium, and the n-doped portion includes a second alloy of silicon-germanium.

  Recently Added Patents
Tailoring the band gap of solar cells made of liquid silane by adding germanium
Machine shop including computer system that interfaces with different legacy servers
Data processing apparatus including reconfigurable logic circuit
Method of patterning color conversion layer and method of manufacturing organic EL display using the patterning method
Vehicle having power supply apparatus
Piano keyboard with key touch point detection
Image reproduction system and image reproduction processing program
  Randomly Featured Patents
Fastener grip length selector
Handling physical uplink shared channel transmissions
Bluetooth pedometer
Semiconductor device having transparent member
Method for reducing oxidation of electroplating chamber contacts and improving uniform electroplating of a substrate
Light device having automatic control device
Circuit arrangement for the busy indication of track sections of a model railway
Methods and apparatus for improving performance of an accelerometer