Resources Contact Us Home
Methods to mitigate plasma damage in organosilicate dielectrics

Image Number 5 for United States Patent #8470706.

Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

  Recently Added Patents
Embedded package and method for manufacturing the same
Television receiver
Systems and methods for processing supplemental information associated with media programming
Method for forming ventilation holes in an electrode plate
Scalable pixel coverage function-map
Semiconductor device
Systems and methods for computer-aided fold detection
  Randomly Featured Patents
Video recorder with distortion corrector circuit
Modeling compound
Printer having an interference-free receiver sheet feed path and method of assembling the printer
Rotary business form printing press
Function for facilitating use of a double-acting communication device and a double-acting communication device
Magnetic recording device components
Purifier device for a bleed circuit of an endothermal engine block and a bleed circuit provided with this device
Programming conflict identification system for reproduction machines
Semiconductor devices and methods for manufacturing the same
Pre-selected compression lead anchoring device