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Semiconductor device with edge termination structure










Image Number 2 for United States Patent #8466492.

A semiconductor device includes a semiconductor body including a first surface, an inner region and an edge region, a first doped device region of a first doping type in the inner region and the edge region, a second device region forming a device junction in the inner region with the first device region, and a plurality of at least two dielectric regions extending from the first surface into the semiconductor body. Two dielectric regions that are adjacent in a lateral direction of the semiconductor body are separated by a semiconductor mesa region. The semiconductor device further includes a resistive layer connected to the second device region and connected to at least one semiconductor mesa region.








 
 
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