Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Contact etch stop layers of a field effect transistor










Image Number 8 for United States Patent #8450216.

An exemplary structure for a field effect transistor according to at least one embodiment comprises a substrate comprising a surface; a gate structure comprising sidewalls and a top surface over the substrate; a spacer adjacent to the sidewalls of the gate structure; a first contact etch stop layer over the spacer and extending along the surface of the substrate; an interlayer dielectric layer adjacent to the first contact etch stop layer, wherein a top surface of the interlayer dielectric layer is coplanar with the top surface of the gate structure; and a second contact etch stop layer over the top surface of the gate structure.








 
 
  Recently Added Patents
Incrementally increasing deployment of gateways
Fixing apparatus
Housekeeping cart
Display screen or portion thereof with graphical user interface
Method and composition for hyperthermally treating cells
Vehicle fender
Charge pump and method of biasing deep N-well in charge pump
  Randomly Featured Patents
Decorative high-pressure laminate and a process for producing a surface layer thereon
Tow chain
Flexible OTP sector protection architecture for flash memories
Monoamine reuptake inhibitors for treatment of CNS disorders
Monitoring system and method
Method and apparatus for making piston rings
Device and method for cultivation
Metamaterial integrated solar concentrator
Fast phase diversity wavefront correction using a neural network
Rotary feed mechanism for lens barrel of compact zoom camera