Resources Contact Us Home
Contact etch stop layers of a field effect transistor

Image Number 8 for United States Patent #8450216.

An exemplary structure for a field effect transistor according to at least one embodiment comprises a substrate comprising a surface; a gate structure comprising sidewalls and a top surface over the substrate; a spacer adjacent to the sidewalls of the gate structure; a first contact etch stop layer over the spacer and extending along the surface of the substrate; an interlayer dielectric layer adjacent to the first contact etch stop layer, wherein a top surface of the interlayer dielectric layer is coplanar with the top surface of the gate structure; and a second contact etch stop layer over the top surface of the gate structure.

  Recently Added Patents
Liquid crystal display and method of driving the same
Case for electronic device
Glow in the dark swim goggle frame and band
Method for production of fermentable sugars from biomass
Method and device for managing a turning setpoint applied to at least one turning actuator for the rear wheels of an automobile
Electronic package with fluid flow barriers
System and method for backup communication over ethernet
  Randomly Featured Patents
Musical box movement
Method of checking for the presence of connection balls
Crop cutting apparatus for a round baler
Anti-skid brake control system with operational mode control and method therefor
Anti-pirate circuit for protection against commercial integrated circuit pirates
Structural reflective insulating material for ducts and other purposes
Method and apparatus for time efficient retransmission using symbol accumulation
Post-imaging punching apparatus and method
Pulse oximeter sensor with piece-wise function
Photographic processes and compositions employing thioether containing silver halide solvents