Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Contact etch stop layers of a field effect transistor










Image Number 5 for United States Patent #8450216.

An exemplary structure for a field effect transistor according to at least one embodiment comprises a substrate comprising a surface; a gate structure comprising sidewalls and a top surface over the substrate; a spacer adjacent to the sidewalls of the gate structure; a first contact etch stop layer over the spacer and extending along the surface of the substrate; an interlayer dielectric layer adjacent to the first contact etch stop layer, wherein a top surface of the interlayer dielectric layer is coplanar with the top surface of the gate structure; and a second contact etch stop layer over the top surface of the gate structure.








 
 
  Recently Added Patents
Method for driving electrophoretic display device, electrophoretic display device, and electronic device
Valved, microwell cell-culture device and method
Nonvolatile memory device
Thermosensitive recording medium
Image forming apparatus and method of translating virtual memory address into physical memory address
Washing machine
Vehicle inertial sensor systems
  Randomly Featured Patents
Film(s) and/or sheet(s) comprising polyester compositions which comprise cyclobutanediol and have a certain combination of inherent viscosity and high glass transition temperature
Process for the catalytic conversion of hydrocarbons into aromatic compounds using a catalyst containing alkali of alkaline-earth metals
Cellular phone
Image sensing device having a selectable detecting area
Oxidation resistant nickel base alloys
Molded base plate for rollerskates attachable to shoes
Failure-analyzing semiconductor device and semiconductor device manufacturing method using the same
Image recording device
Aminopyrimidine derivatives as LRRK2 inhibitors
Method and apparatus for generating and producing two-dimensional graphic object by polynominal parametric curves