Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Contact etch stop layers of a field effect transistor










Image Number 5 for United States Patent #8450216.

An exemplary structure for a field effect transistor according to at least one embodiment comprises a substrate comprising a surface; a gate structure comprising sidewalls and a top surface over the substrate; a spacer adjacent to the sidewalls of the gate structure; a first contact etch stop layer over the spacer and extending along the surface of the substrate; an interlayer dielectric layer adjacent to the first contact etch stop layer, wherein a top surface of the interlayer dielectric layer is coplanar with the top surface of the gate structure; and a second contact etch stop layer over the top surface of the gate structure.








 
 
  Recently Added Patents
Headset, terminal, and method capable of switching headset mode
Thiocyanato or isothiocyanato substituted naphthalene diimide and rylene diimide compounds and their use as n-type semiconductors
Integrated circuit packaging system with coupling features and method of manufacture thereof
Glass or glass-ceramic pane reflecting infrared radiation
Methods and compositions for improving photodynamic therapy through administration of lipids
Pulsed plasma with low wafer temperature for ultra thin layer etches
Audio processing in a multi-participant conference
  Randomly Featured Patents
Spatial positioning of spectrally labeled beads
Apparatus and method for bowling lane maintenance
Supporting mechanism for allowing an object to make a pseudo-translational motion
Flexible spine stabilization system
Apparatus and method for wood mulch bales
Turbo impeller
Wheeled, overhead wire installing apparatus
L-ascorbate-2-phosphate salts in blood cell storage
Apparatus and methods for controlling position of marine seismic sources
Retention clip for a spray wand hose