Resources Contact Us Home
Contact etch stop layers of a field effect transistor

Image Number 2 for United States Patent #8450216.

An exemplary structure for a field effect transistor according to at least one embodiment comprises a substrate comprising a surface; a gate structure comprising sidewalls and a top surface over the substrate; a spacer adjacent to the sidewalls of the gate structure; a first contact etch stop layer over the spacer and extending along the surface of the substrate; an interlayer dielectric layer adjacent to the first contact etch stop layer, wherein a top surface of the interlayer dielectric layer is coplanar with the top surface of the gate structure; and a second contact etch stop layer over the top surface of the gate structure.

  Recently Added Patents
Dynamic load profiling in a power network
Three-dimensional holographic display using active shutter
Inhibitors of bacterial tyrosine kinase and uses thereof
Managing and collaborating with digital content
Phase lock loop with injection pulse control
Flame-retardant polyamide composition
Photoelectric conversion apparatus
  Randomly Featured Patents
Device for mechanical weight bearing indication with load range capability
Outer cover for a disposable absorbent article
Lubricating oil containing additive comprising reaction product of molybdenum dithiocarbamate and dihydrocarbyl dithiophosphoric acid
High-speed interconnection link having automated lane reordering
Injection molding apparatus having a cooled core
Method for producing a turbomachine blade made from a composite material
Thermoplastic molding materials of polyester and polycarbonate
Universal connection unit
Altered antibodies
Electrical device with screen