Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Contact etch stop layers of a field effect transistor










Image Number 2 for United States Patent #8450216.

An exemplary structure for a field effect transistor according to at least one embodiment comprises a substrate comprising a surface; a gate structure comprising sidewalls and a top surface over the substrate; a spacer adjacent to the sidewalls of the gate structure; a first contact etch stop layer over the spacer and extending along the surface of the substrate; an interlayer dielectric layer adjacent to the first contact etch stop layer, wherein a top surface of the interlayer dielectric layer is coplanar with the top surface of the gate structure; and a second contact etch stop layer over the top surface of the gate structure.








 
 
  Recently Added Patents
Method and laser receiver for acoustically indicating a laser beam
Image processing apparatus, image display apparatus, and image processing method
Efficient relay automatic repeat request procedure in broadband wireless access system
Method for forming ventilation holes in an electrode plate
Compression molding method and reinforced thermoplastic parts molded thereby
Pipette device
Semiconductor device, integrated circuit and method of manufacturing an integrated circuit
  Randomly Featured Patents
Illuminated mouthpiece
Low-foaming, nonionic surfactant mixtures, and laundry detergents containing the same
Piercing unit with rotating head
Seat structure for a vehicle
Conductive lines on the back side of wafers and dice for semiconductor interconnects
Method of producing titanium aluminide metal matrix composite articles
Energy transfer dyes with enhanced fluorescence
Overhead-line mast with insulated mast head
Turbocharger
Heat sink assembly